1. Reliability improvement in GaN HEMT power device using a field plate approach
- Author
-
Edward Yi Chang, Jer-shen Maa, Shih-Chien Liu, Heng-Tung Hsu, Yueh Chin Lin, Hiroshi Iwai, Jin Hwa Lee, Wen Hao Wu, Chia Chieh Hsu, and Ping Chieh Chin
- Subjects
010302 applied physics ,Engineering ,business.industry ,Transistor ,Electrical engineering ,High voltage ,02 engineering and technology ,High-electron-mobility transistor ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Capacitance ,Electronic, Optical and Magnetic Materials ,law.invention ,Threshold voltage ,Stress (mechanics) ,Reliability (semiconductor) ,law ,0103 physical sciences ,Materials Chemistry ,Optoelectronics ,Breakdown voltage ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
This study investigates the effect of implementing a field plate on a GaN high-electron-mobility transistor (HEMT) to improve power device reliability. The results indicate that the field plate structure reduces the peak electrical field and interface traps in the device, resulting in higher breakdown voltage, lower leakage current, smaller current collapse, and better threshold voltage control. Furthermore, after high voltage stress, steady dynamic on-resistance and gate capacitance degradation improvement were observed for the device with the field plate. This demonstrates that GaN device reliability can be improved by using the field plate approach.
- Published
- 2017