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This paper presents a high-power IGBT testing platform for uneven temperature conditions and its design criteria. Considering the influence of layout parasitic parameters on the measurement results, commutation rules and independent junction temperature control, a universal high-power switching characterization platform is built and operated. Importantly, it is capable of 3.6 kA current level test requirement, which can cover the largest current level for the state-of-the-art IGBT modules. To improve the test accuracy of double pulse test method, a compensation algorithm is proposed to eliminate the circuit power loss under high current test conditions. Moreover, in order to simulate the uneven junction temperature effects occurring in real life, the junction temperatures of inspected IGBT and freewheeling diode are controlled independently. Quantitative analyses of the switching characteristics for junction temperatures up to 125 °C are performed.

In this paper, we have proved that the soft damage from human body ESD can actually cause EOS damage, while integrated IGBT inverter modules (or intelligent power modules) are operating. Failure mechanism was defined as a latchup phenomenon by ESD damage leakage. Failure modes of each failed IGBT inside two integrated IGBT inverter modules were soft and hard burnout, respectively. To determine the failure mechanism, we have done fault tree analysis. From this analysis, we could conclude the main factor as the ESD event between device ESD immunity and PCB assembly line. In addition, from the PCB assembly line, we have identified damage samples due to an ESD event. Based on this result, we have implied ESD on IGBT and intentionally caused a leakage, then applied the device to the system. After an aging test, we could reproduce soft burnout and hard burnout.