26 results on '"Falster, R."'
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2. In-situ characterization of electron-assisted regeneration of Cz-Si solar cells
3. On the equilibrium concentration of boron-oxygen defects in crystalline silicon
4. Lifetimes exceeding 1ms in 1-Ωcm boron-doped Cz-silicon
5. The diffusivity of the vacancy in silicon: Is it fast or slow?
6. Intrinsic point defects and grown-in microdefects in silicon crystals—comment on: “Intrinsic point defect behaviour in silicon crystals during growth from the melt: A model derived from experimental results”, T. Abe, T. Takahashi, Journal of Crystal Growth 334 (2011) 16
7. Lifetime degradation mechanism in boron-doped Czochralski silicon
8. Electrical properties of nitrogen-doped Float-Zoned silicon annealed in a range of 200 to 900°C
9. Correlated out-diffusion of nitrogen and in-diffusion of self-interstitials resulting in elimination of nitrogen-related deep centres
10. Evidence of energy levels due to nitrogen dimers in silicon
11. Gigantic uphill drift of vacancies and self-interstitials in silicon
12. Deep level generation in nitrogen-doped float-zoned silicon
13. The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals
14. Properties of vacancies and self-interstitials in silicon deduced from crystal growth, wafer processing, self-diffusion and metal diffusion
15. The effect of nitrogen on void formation in Czochralski silicon crystals
16. Dielectric breakdown distributions for void containing silicon substrates
17. Diffusion-limited growth of single- and double-octahedral voids in silicon and the effect of surface oxygen monolayer
18. Effect of doping on point defect incorporation during silicon growth
19. Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
20. Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon
21. The engineering of intrinsic point defects in silicon wafers and crystals
22. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
23. Nucleation and growth of faceted voids in silicon crystals
24. Vacancy-type microdefect formation in Czochralski silicon
25. Oxygen precipitate precursors and size thresholds for the preferential nucleation for copper and nickel precipitation in silicon: the detection of copper and nickel contamination by minority carrier lifetime methods
26. Impact of silicon surface characteristics on MOS device yield for ULSI
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