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Start Over Author "Do-Bin Kim" Publisher elsevier bv
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1. Program scheme using common source lines in channel stacked NAND flash memory with layer selection by multilevel operation

Author

Byung-Gook Park, Sang-Ho Lee, Daewoong Kwon, Do-Bin Kim, and Seung Hyun Kim

Subjects
010302 applied physics, Boosting (machine learning), Computer science, Nand flash memory, 0103 physical sciences, Materials Chemistry, Source lines, Electronic engineering, Electrical and Electronic Engineering, Common source line, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials
Abstract

To obtain high channel boosting potential and reduce a program disturbance in channel stacked NAND flash memory with layer selection by multilevel (LSM) operation, a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. Technology computer-aided design (TCAD) simulations are performed to verify the validity of the new method in LSM. Through TCAD simulation, it is revealed that the program disturbance characteristics is effectively improved by the proposed scheme.

Published
2018
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