84 results on '"Derrien J"'
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2. P102 Clear illustration of improved survival in cystic fibrosis using the Kaplan-Meier method: the 50-year experience of Brittany, France
3. OC-0199 Toward traceable dosimetry for electronic brachytherapy devices with skin applicators
4. ASTRO 2018 : état de l’art en radiothérapie
5. Profil des consommateurs de substances psychoactives chez les consultants des CDAG-CIDDIST du Languedoc–Roussillon en 2014 : évaluation du risque sexuel lié à l’usage de substances
6. Place des traitements médicaux : indication, durée, efficacité, chez la femme porteuse de fibromes utérins symptomatiques en période d’activité génitale
7. Effect of thickness on structural and magnetic properties of Mn5Ge3 films grown on Ge(111) by solid phase epitaxy
8. Long range Mn segregation and intermixing during subsequent deposition of Ge capping layers on Mn5Ge3/Ge(111) heterostructures
9. L'θchographie obstθtricale au cours de la grossesse en l'absence de facteur de risque
10. Epitaxial growth of Mn5Ge3/Ge(111) heterostructures for spin injection
11. Growth of magnetic materials and structures on Si(001) substrates using Co2Si as a template layer
12. Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters
13. Dépistage du cancer du sein en médecine libérale : une enquête auprès des généralistes et des gynécologues de Rhône-Alpes
14. Role of point defects on the optical properties of self-assembled Ge/Si hut clusters
15. Electronic structure calculations for Si/Si1−xGex multi-quantum well devices
16. Electronic structure and optical properties of Si1−xGex alloys
17. Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure
18. Temperature and excitation power dependencies of the photoluminescence of planar and vertically self-organized Si0.70Ge0.30/Si strained superlattices
19. Structural characterization of Si1−xGex/Si strained superlattices and relaxed virtual substrates grown by chemical vapor deposition
20. Chemical vapor deposition of silicon–germanium heterostructures
21. On the existence of cohomologous continuous cocycles for cocycles with values in some Lie groups
22. Silicon quantum integrated circuits – an attempt to fabricate silicon-based quantum devices using CMOS fabrication techniques
23. Dependence of SiGe growth instability on Si substrate orientation
24. Growth mechanisms of SiGe on (111) and (100) Si substrates
25. Homoepitaxy of silicon at low temperature on clean and Ga-covered substrates
26. EELS investigation of luminescent nanoporous p-type silicon
27. Preface
28. STM studies of GeSi thin layers epitaxially grown on Si(111)
29. Interface phase transition as observed in ultra thin FeSi2 epilayers
30. Chemical beam epitaxy of iron disilicide on silicon
31. High-resolution electron microscopy study of αFeSi2 heteroepitaxy on Si(111)
32. Synthesis and properties of epitaxial semiconducting silicides
33. Silicide epilayers: recent developments and prospects for a Si-compatible technology
34. Growth of β-FeSi2 on silicon substrates by chemical beam epitaxy
35. Infrared and electrical properties of thin films and junctions of β-FeSi2
36. Epitaxial growth of β-FeSi2 on silicon (111): a real-time RHEED analysis
37. Semiconducting silicide-silicon heterostructures: growth, properties and applications
38. Infrared and Raman characterization of beta iron silicide
39. Electronic structure of epitaxial β-FeSi2 on Si(111)
40. Study of the Co/Si(111) interface formation using electron energy loss spectroscopy
41. Heteroepitaxy of metallic and semiconducting silicides on silicon
42. Oxidation of TaSi2 thin films on polycrystalline Si
43. Electronic structure of Ag adsorbed on Si(111); experiment and theory
44. Initial interaction of oxygen with aluminium single crystal faces: A LEED, AES and work function study
45. Direct observation of the nucleation and growth modes of Ag/Si(111)
46. Isobar, low energy electron diffraction and loss spectroscopy measurements of cesium covered (110) gallium arsenide
47. Angle resolved photoemission measurements on AgSi(111) 7 × 7 interfaces
48. Band bending variation of the Si(111) surface during its thermal oxidation
49. Early stages of epitaxial CoSi2 formation on Si(111) surface as investigated by ARUPS, XPS, LEED and work function variation
50. Laser annealing of the Si-Au interface
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