1. Resonant tunneling through two impurities in disordered barriers
- Author
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Gac Jones, A. K. Savchenko, D. R. Mace, V. V. Kuznetsov, A. Woolfe, Michael Pepper, and David A. Ritchie
- Subjects
Materials science ,Condensed matter physics ,Chemistry ,Schottky barrier ,Transistor ,Scanning tunneling spectroscopy ,Resonance ,Conductance ,Heterojunction ,Surfaces and Interfaces ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Condensed Matter Physics ,law.invention ,Magnetic field ,Surfaces, Coatings and Films ,Tunnel effect ,Amplitude ,law ,Impurity ,Condensed Matter::Superconductivity ,Materials Chemistry ,Condensed Matter::Strongly Correlated Electrons ,MESFET ,Ohmic contact ,Quantum tunnelling - Abstract
We have studied the conductance through localised states in a lateral barrier produced by a short (∼ 0.2 μm) gate in GaAs MESFETs. Distinctive peaks in the ohmic conductance as a function of the gate voltage have been associated with hopping and resonant tunneling (RT). In addition to RT through one impurity, a new effect has been observed: RT through two and more impurities. We distinguish between the three mechanisms by the temperature dependence of the conductance, its variation with DC bias along the barrier, and the I–V characteristics of the samples. more...
- Published
- 1996
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