1. Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application
- Author
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M. Ahmetoglu, B. Kucur, E.V. Kunitsyna, Yu. P. Yakovlev, Maya P. Mikhailova, I. A. Andreev, Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ahmetoğlu, Muhitdin A., and Kucur, Banu
- Subjects
Heat Emissions ,Gallium Antimonides ,Emitters (Equipment) ,Electric properties ,At-wavelength ,Optical characteristics ,Electrical and optical properties ,Double heterojunctions ,law.invention ,law ,Photodiodes ,Spectroscopy ,Quantum tunnelling ,Long wavelength ,Physics, applied ,Tunneling mechanism ,Optical properties ,Physics ,Internal quantum efficiency ,GaInAsSb ,Heterojunction ,Reverse bias ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,Thermophotovoltaic ,Heterojunctions ,Optoelectronics ,Antireflection coatings ,Reverse currents ,Quantum efficiency ,Dark current ,Instruments & instrumentation ,Temperature coefficient ,III-V semiconductors ,Materials science ,Dark currents ,Type II ,Current flows ,Low temperature regions ,Optics ,Infrared photodiode ,Depletion region ,Band alignments ,Current mechanisms ,Heterostructures ,Spectral sensitivity ,Thermophoto voltaic cells ,business.industry ,High temperature ,Photodiode ,Optical materials ,TPV cells ,II-IV semiconductors ,business - Abstract
The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Delta lambda/Delta T = 1.6 nm/K. Quantum efficiency of 0.6-0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 mu m. (C) 2010 Elsevier B.V. All rights reserved. Russian Foundation for Basic Research (RFBR) (07-02-01359) Russian Foundation of Basic Research (RFBR) (09-08-91224)
- Published
- 2010