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Secondary electrocaloric effect (ECE) arising from piezoelectricity combined with crystal thermal expansion was often overlooked in ECE studies of ferroelectric ceramics. This work mainly evaluated the primary ECE (ΔTECE) and secondary ECE (∆T2) of eco-friendly BaSnxTi1-xO3 (BSnT100x, 0

CeO2 is a promising candidate for materials utilized in solid oxide fuel cells (SOFCs) due to its high ionic conductivity. The high operating temperature of SOFCs results in residual thermal stress in the materials. In this work, for the first time, we studied simultaneously the mechanical and electronic behavior of CeO2 under different uniaxial tensile loading directions using density functional theory. CeO2 shows strong anisotropic mechanical and electronic behavior under uniaxial tensile strain that it has the highest ideal strength and fracture strain along [100] direction. Meanwhile, [100] tensile strain also leads to the largest band gap reduction compared with the other two strain directions. The analysis of the mechanism shows that the highest strength along [100] direction is from the highest Young’s modulus and surface energy. While the analysis on the band gap variation using a theoretical model previously developed by us suggest that the largest average bond length and dielectric susceptibility variation leads to the largest band gap reduction when [100] tensile strain is applied to CeO2. Therefore, the current study provides a meaningful insight into the mechanical and electronic properties of CeO2 under stress, which is vital for its application as SOFCs’ materials.

The lack of understanding in engineering cation defects in metal oxides has impeded the development of high performance, and transparent electronic devices. Through studying the formation energy of various cationic defects in Mn-doped SnO2 via simulation, we found Mn3+ cations occupy the interstitial sites of SnO2 nanocrystals, and we proved that such defects can be engineered to significantly improve resistive switching performance of tin oxide-based devices. With this finding, a new solution-processed approach has been developed to synthesize Mn-doped SnO2 nanocrystals with a self-assembly technique for high quality transparent Mn-doped SnO2 thin film fabrication. Defect migration behavior of the Mn-doped SnO2 thin film was studied by building a metal-oxide-metal sandwich device. The effects of cationic defects, such as Mn interstitials, on the charge transport behavior were further studied to reveal the underlying mechanism. This study provides new insights into the design and engineering of defects in transparent oxides for high-density data storage applications. Keywords: Nanocrystal growth, Self-assembly, Tin oxide, Liquid liquid interface

Resistive switching behaviour can be classified into digital and analog switching based on its abrupt and gradual resistance change characteristics. Realizing the transition from digital to analog switching in the same device is essential for understanding and controlling the performance of the devices with various switching mechanisms. Here, we investigate the resistive switching in a device made with strontium titanate (SrTiO3) nanoparticles using X-ray diffractometry, scanning electron microscopy, Raman spectroscopy, and direct electrical measurements. It is found that the well-known rupture/formation of Ag filaments is responsible for the digital switching in the device with Ag as the top electrode. To modulate the switching performance, we insert a reduced graphene oxide layer between SrTiO3 and the bottom FTO electrode owing to its good barrier property for the diffusion of Ag ions and high out-of-plane resistance. In this case, resistive switching is changed from digital to analog as determined by the modulation of interfacial resistance under applied voltage. Based on that controllable resistance, potentiation and depression behaviours are implemented as well. This study opens up new ways for the design of multifunctional devices which are promising for memory and neuromorphic computing applications.

The ultra-low thermal conductivity of Cu2Se is well established, but there is so far no consensus on the underlying mechanism. One proposal is that the fast-ionic diffusion of copper suppresses the acoustic phonons. The diffusion coefficients reported previously, however, differ by two orders of magnitude between the various studies and it remains unclear whether the diffusion is fast enough to impact the heat-bearing phonons. Here, a two-fold approach is used to accurately re-determine the diffusion rates. Ab-initio molecular dynamics simulations, incorporating landmark analysis techniques, were closely compared with experimental quasielastic/inelastic neutron spectroscopy. Reasonable agreement was found between these approaches, consistent with the experimental coefficient of 3.1 ± 1.3 10-5 cm2.s-1 and an activation barrier of 140 ± 60 meV. The hopping mechanism includes short 2 A hops between tetragonal and interstitial octahedral sites. This process forms dynamic Frenkel defects, however, there is no indication of additional broadening in the density-of-states indicating the intrinsic anharmonic interactions dictate the phonon lifetimes.

In this work, we report a bifunctional electrocatalyst with nickel sulphide (Ni3S2) as the template, vertical graphene (VG) as the bridging material, and nickel–cobalt layered double hydroxides (NiCo LDHs) nanosheets as the active catalyst. The hybrid Ni3S2/VG@NiCo LDHs catalyst exhibits excellent activity in alkaline solution for both OER (overpotential ~ 320 mV at a current density of 100 mA cm-2) and HER (overpotential ~ 120 mV at a current density of 10 mA cm-2). In addition, the hybrid catalyst possesses superior stability with 99% retention of voltage upon a continued current density of 20 mV cm-2 for over 24 h. It is found that the transitions of Ni2+/Ni3+ and Co2+/Co3+ ions enable excellent HER and OER performances, and VG bridging between NiCo LDHs and Ni3S2, enable fast charge-transfer and a high density of active sites, resulting in the improved electrical conductivity, intrinsic activity, and electrochemical stability. This work provides a guideline to design the architecture of bifunctional catalysts for highly efficient water splitting applications.

CeO2 is a promising candidate for materials utilized in solid oxide fuel cells (SOFCs) due to its high ionic conductivity. The high operating temperature of SOFCs results in residual thermal stress in the composing materials. In this work, we studied simultaneously the mechanical and electronic behavior of CeO2 under different uniaxial tensile loading directions using density functional theory. CeO2 shows strong anisotropic mechanical and electronic behavior under uniaxial tensile strain that it has the highest ideal strength and fracture strain along [100] direction. Meanwhile, [100] tensile strain also leads to the largest band gap reduction compared with the other two strain directions. The analysis of the mechanism shows that the highest strength along [100] direction is from the highest Young's modulus and surface energy. Meanwhile, the analysis on the band gap variation using a theoretical model previously developed by us suggest that the largest average bond length and dielectric susceptibility variation leads to the largest band gap reduction when [100] tensile strain is applied to CeO2. Therefore, the current study provides a meaningful insight into the mechanical and electronic properties of CeO2 under stress, which is vital for its application as SOFCs’ materials.

Photocatalytic materials are pivotal for the implementation of disruptive clean energy applications such as conversion of H$_{2}$O and CO$_{2}$ into fuels and chemicals driven by solar energy. However, efficient and cost-effective materials able to catalyze the chemical reactions of interest when exposed to visible light are scarce due to the stringent electronic conditions that they must satisfy. Chemical and nanostructuring approaches are capable of improving the catalytic performance of known photoactive compounds however the complexity of the synthesized nanomaterials and sophistication of the employed methods make systematic design of photocatalysts difficult. Here, we show by means of first-principles simulation methods that application of biaxial stress, $\eta$, on semiconductor oxide thin films can modify their optoelectronic and catalytic properties in a significant and predictable manner. In particular, we show that upon moderate tensile strains CeO$_{2}$ and TiO$_{2}$ thin films become suitable materials for photocatalytic conversion of H$_{2}$O into H$_{2}$ and CO$_{2}$ into CH$_{4}$ under sunlight. The band gap shifts induced by $\eta$ are reproduced qualitatively by a simple analytical model that depends only on structural and dielectric susceptibility changes. Thus, epitaxial strain represents a promising route for methodical screening and rational design of photocatalytic materials.