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In this paper, a combination of in-situ chemical synthesis and electrolysis methods was applied for the preparation of zinc oxide/graphene oxide quasi core-shell nanoparticles. Pure zinc oxide was also prepared using the same method at different temperatures. 100 °C was selected for synthesizing the ZnO/GO quasi core-shell (zinc oxide as a core and few layers of graphene oxide as a shell). The particle size was 15 ± 2 nm in all samples. In both processes, oxygen was the main reason for the connection between the core and the shell. XRD patterns also confirmed the formation of ZnO (with regular wurtzite structure) and ZnO/GO quasi core-shell structures. Raman spectroscopy results confirmed ZnO formation at various temperatures, but little shift was observed for ZnO/GO quasi core-shell after conjugating. HRTEM, BET, PL and UV-Vis were able to define and confirm the formation of the quasi core-shell structure and the mechanism of connection at the interface. Photoluminescence spectroscopy showed a few numbers of PL peaks that were not related to the presence of graphene. These sub-peaks depend on the kind of synthesis and creation of defects (based on defects chemistry). The results indicated that graphene just changed the intensity of the PL peaks. Our data indicated that the rate of MB degradation for ZnO/GO quasi core-shell structures was less than that of the pure zinc oxide. After conjugating between ZnO and GO, two mechanisms are suggested. The first is the band structure modification in the boundary of the core and shell. The second is the diffusion of carbon atoms or functions as dopant in ZnO surface. This report addresses how band structure modification, defect chemistry; microstructural features can affect the photocatalytic and photoluminescence behavior in a specific core-shell structure.

ZnO/graphene oxide core-shell nanoparticles (ZGNPs) were prepared by via in-situ chemical synthesis and electrolysis. This report addresses the disagreement in the photocatalytic and photoluminescence behavior in this system. XRD, Raman, HRTEM, PL and UV–Vis were able to confirm ZnO nanoparticles and core-shell structures formation at various temperatures. A little shift was observed in Raman for ZGNPs after conjugating. PL showed a few peaks that were not related to the graphene, which depends on the synthesis route and defects. After conjugating between ZnO and Graphene, two mechanisms are suggested. The first is band structure modification in the boundary of core and shell. The second one is diffusion of functional group in GO as a dopant on ZnO surface.

This paper reports the extreme sensitivity of the microstructure evolution in Sn-Ag-Cu (SAC) micro-solder joint, consisting of 15–20 µm thick solder alloy and electrolytic Ni plated Cu electrodes, to electromigration (EM) conditions resulting from a kinetic competition between the growth of Ni3Sn4 intermetallic compound (IMC) and EM of Sn in solder matrix. Microstructural analysis of samples tested at various conditions reveals that the voiding in the solder joint develops to the full extent only when the EM rate of Sn in the solder alloy is sufficiently greater than the growth rate of Ni3Sn4 IMC because the IMC phase is EM-inactive. The decisive evidence for such behavior is found from the samples tested at 160 and 170 °C under 35 kA/cm2. The samples tested at 170 °C show the classic solder joint microstructure that typically develops under the influence of EM, that is the exaggerated growth of Ni3Sn4 at the anode as a result of Ni-EM and voids at the cathode interface of the joint as a result of Sn-EM. Contrarily, such characteristic features are not found in samples tested at 160 °C, instead, the joint is fully converted to Ni3Sn4 without sign of its biased growth and voiding activities. The near absence of biased EM microstructure at 160 °C is believed to result from the stress-gradient developed by Sn EM counteracting the EM force on Ni. No such effect is at work at higher temperatures due to the significantly higher initial Sn EM rate which leads to voids and reduces the stress gradient.

This paper reports the mechanism of the power conversion efficiency (PCE) improvement in the ZnO nanowires (NW) based solar cells by using CdS/CdSe nanocomposite sensitizers instead of a single CdS quantum-dot (QD) sensitization layer. Two cells with the different type of the sensitization layers were essentially consists of the high-density ZnO nanowire (NW) and a sensitization layer of either CdS-QD or CdS/CdSe nanocomposite, which were produced by an in-situ sequential assembly process of both ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD). Measurement on the PCE revealed that the cell with CdS/CdSe nanocomposite showed a three-fold increase in PCE compared to the one with a CdS-QD layer. While such improvement in PCE appeared to be consistent with the step-wise band alignment mechanism suggested for the type-II heterojunction of CdSe/CdS/ZnO structures, our microstructural analysis of the cell structure yielded results strongly indicating that the reduction of both interface defects and misfit strain in the CdS lattices plays an additional role on the PCE improvement. Analyses on the interface and the CdS crystallinity using high-resolution electron microscopy (HRTEM) combined with the geometric phase analysis (GPA) revealed that the addition of CdSe effectively reduced the lattice strain in the CdS without introducing misfit dislocations at CdS/CdSe interface, probably owing to Se anion diffusion (or exchange) to the defective SILAR CdS layer during the CBD process. Although an entire enhancement in PCE by the addition of CdSe layer seen in our study cannot be attributed solely to the interface defect/strain reduction, our observations suggest that control of misfit dislocation and lattice nano-strain is equally significant to the step-wise band alignment in affecting the performance of the heterojunction solar cell.

The improved control of lattice strain in the quantum-dot (QD) region of p – i – n structures using a modified epitaxial growth procedure has been observed and analyzed. Strain in the QD region was managed by (a) inserting a correction layer (CL) with a lattice constant that was intermediate between the lattice constant of the QD region and the lattice constant of the underlying substrate, (b) capping the QD islands with a layer that had the same lattice constant as the CL, and (c) the utilization of only three atomic elements in the growth of the QD intrinsic region. These results were demonstrated in In x Ga 1− x As/InAs/In x Ga 1− x As p–i–n devices with five InAs QD layers and then compared with In x Ga 1− x As p–n (HOM) devices with identical ternary alloy compositions and no quantum dot layers. The layers in all of the devices were grown by molecular beam epitaxy. X-ray diffraction (XRD) measurements showed the interface dislocations in the QD samples were fewer than in the HOM samples and were isolated at the In x Ga 1− x As–GaAs interface, away from the optically active QD region. Cross-sectional, high-resolution transmission electron microscopy (HRTEM) images showed no evidence of threading dislocations in the QD region. Post-growth calculations of the average lattice constant of the QD region, using atomic force microscopy, XRD, and HRTEM data, indicated the QD region experienced a ∼3× reduction in its lattice misfit while increasing its critical thickness by more than 3×. Although the total misfit in the QD samples increased with the insertion of the CL and the average lattice constant of the QD region was not matched to the CL, the strain energy nevertheless was absorbed successfully without creating deleterious dislocations as seen in QD devices exhibiting lower dark current densities than in HOM control devices.

The present paper reports the results of the controlled precipitation for the HgTe nano-crystals in the PbTe semiconductor matrix and demonstrates its effectiveness in producing well-organized and crystallographically aligned semiconductor nano-crystals. Following the same procedure used in metallic alloys, the semiconductor alloys are treated at 600°C for 48 h, quenched and aged up to 400 h at 300°C and 400°C to induce homogeneous nucleation and growth of HgTe precipitates. Examination of the resulting precipitates using transmission electron microscopy (TEM) reveals that the coherent HgTe precipitates form as thin disks along the {1 0 0} habit planes of PbTe matrix. It is also found that the precipitate undergoes a gradual shape change without any noticeable coarsening, from a disk to a cube, as the aging time increases. The microstructure after full aging is found to contain almost equal sized HgTe cubes, roughly 7 nm, that maintain coherency with {1 0 0} planes of the matrix. These results combined with the extreme dimension of the precipitates and the simplicity of the formation process leads to a belief that controlled precipitation can be an effective method in preparing a desirable quantum-dot microstructure.