37 results on '"Cho, Mann-Ho"'
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2. Advanced interfacial phase change material: Structurally confined and interfacially extended superlattice
3. Broadband and ultrafast photodetector based on PtSe2 synthesized on hBN using molecular beam epitaxy
4. Positive charge-mediated phase modulation of MoTe2 synthesized by molecular beam epitaxy
5. Phase change in GeTe/Sb2Te3 superlattices: Formation of the vacancy-ordered metastable cubic structure via Ge migration
6. Corrigendum to “Spatially inhomogeneous operation of phase-change memory” [Appl. Surf. Sci. 589 (2022) 153026]
7. Spatially inhomogeneous operation of phase-change memory
8. Improvement of electrical performance using PtSe2/PtTe2 edge contact synthesized by molecular beam epitaxy
9. Ultrathin platinum diselenide synthesis controlling initial growth kinetics: Interfacial reaction depending on thickness and substrate
10. Ferroelectric switching in GeTe through rotation of lone-pair electrons by Electric field-driven phase transition
11. Enhancement of photoresponse in Bi2Se3/graphene heterostructures by effective electron–hole separation through internal band bending
12. 3D-to-2D phase transformation through highly ordered 1D crystals from transition-metal oxides to dichalcogenides
13. Modulation of optoelectronic properties of the Bi2Te3 nanowire by controlling the formation of selective surface oxidation
14. Phase-change mechanism and role of each element in Ag-In-Sb-Te: Chemical bond evolution
15. Phase-change properties related to anharmonicity of local structure
16. Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement
17. Phase-Change Mechanism and Role of Each Element in Ag-In-Sb-Te: Chemical Bond Modulation
18. Trap-assisted high responsivity of a phototransistor using bi-layer MoSe2 grown by molecular beam epitaxy
19. Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor
20. Effect of substrate on photo-induced persistent photoconductivity in InAs nanowires
21. Enhancement in thermoelectric properties of Te-embedded Bi2Te3 by preferential phonon scattering in heterostructure interface
22. Reduction of defect states in atomic-layered HfO2 film on SiC substrate using post-nitridation annealing
23. Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping
24. Electrical properties of the HfO2–Al2O3 nanolaminates with homogeneous and graded compositions on InP
25. Structural evolution and defect control of yttrium-doped ZrO 2 films grown by a sol–gel method
26. Electronic structure of low work function electrodes modified by C16H33SH
27. The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature
28. Control of the interfacial reaction in HfO2 on Si-passivated GaAs
29. Effect of SiO2 tunnel layer processes on the characteristics of MONOS charge trap devices with poly-Si channels
30. Generation of planar defects caused by the surface diffusion of Au atoms on SiNWs
31. Characteristics of phase transition and separation in a In–Ge–Sb–Te system
32. Effect of nitrogen incorporation and oxygen vacancy on electronic structure and the absence of a gap state in HfSiO films
33. Solution-deposited GdCeOx thin films: Microstructure, band structure, and dielectric property
34. Luminescent mechanism of Eu3+-doped epitaxial Gd2O3 films grown on a Si (111) substrate using an effusion cell
35. Thermal stability of Ni–Pt–Ta alloy silicides on epi-Si1−xCx
36. Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers
37. Energy level alignment in N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/hexadecafluoro copper phthalocyanine (F16CuPc)/Au and NPB/CuPc/Au heterojunction
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