24 results on '"Brémond G"'
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2. Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(001)
3. Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
4. Toward long wavelength low density InAs/GaAs quantum dots
5. Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)
6. Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure–chemical vapor deposition
7. Nystagmus induit par des vibrations : physiopathogénie et intérêt en clinique
8. Electrical field effect on the optical threshold energy of donor and acceptor levels in chromium-doped GaP
9. Influence of carrier and doping gases on silicon quantum dots nucleation
10. Electric measurements by AFM on silicon nanocrystals
11. Electrical field effect on both thermal ionization energy and optical threshold energy of the Cr3+/4+ deep donor level in GaP
12. Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture
13. Electrical defect study in thin-film SiGe/Si solar cells
14. RTS noise in submicron SiGe epitaxial base bipolar transistors
15. Electrical and optical characterisation of vanadium in 4H and 6H–SiC
16. Influence of deep levels on CdZnTe nuclear detectors
17. Investigation of deep levels in vanadium-doped CdTe and CdZnTe
18. Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitors
19. Characterization of Si/SiGe heterojunction bipolar transistors by deep level transient spectroscopy
20. Thermal emission of holes from confined levels in strained SiGe channel p-MOSFETS
21. Recombination mechanisms via deep levels in RTCVD Si/Si0.85Ge0.15/Si double heterostructures
22. Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS
23. Optical and thermal spectroscopy of vanadium-doped CdTe and related photorefractive effect
24. Characterization of the GaAs/Si material grown by MOCVD for light emitting diodes
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