Search

Your search keyword '"Arnulf Leuther"' showing total 2 results
Start Over Author "Arnulf Leuther" Publisher elsevier bv
2 results on '"Arnulf Leuther"'

1. Multibias scalable HEMT small-signal modeling based on a hybrid direct extraction/particle swarm optimization approach

Author

Hermann Massler, Y. Campos-Roca, Arnulf Leuther, and Publica

Subjects
Model extraction, Engineering, business.industry, Extraction (chemistry), General Engineering, Particle swarm optimization, metamorphic high electron mobility transistor (mHEMT), High-electron-mobility transistor, small-signal modeling, Signal modeling, Scalability, Electronic engineering, pseudomorphic high electron mobility transistor (PHEMT), business, Scaling, scalability, particle swarm optimization (PSO)
Abstract

A new multibias HEMT small-signal model extraction method is proposed. The approach, based on scaling rules, combines direct extraction techniques and a particle swarm optimization algorithm. This method has been successfully tested with PHEMTs and MHEMTs, leading to accurate and scalable models up to 70 and 120 GHz, respectively.

Published
2012
Full Text
View/download PDF

2. Reliability of 70 nm metamorphic HEMTs

Author

W. Jantz, Helmer Konstanzer, M. Meng, Arnulf Leuther, Maximilian Dammann, Rudiger Quay, Michael Mikulla, and Publica

Subjects
Materials science, MHEMT, Eindiffusion des Gatemetalls, chemistry.chemical_element, degradation mechanisms, Activation energy, Degradationsmechanismus, Stress (mechanics), Reliability (semiconductor), Electronic engineering, gate sinking, Electrical and Electronic Engineering, Diffusion (business), Safety, Risk, Reliability and Quality, Ohmic contact, lifetime, business.industry, Lebensdauer, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Semiconductor, chemistry, Optoelectronics, Degradation (geology), business, Platinum
Abstract

The reliability and degradation mechanisms of 70 nm gate length metamorphic InAlAs/InGaAs HEMTs for low noise applications will be presented and discussed. Based an a 10% g(ind m max) failure criterion, a median time to failure of 10(exp 6) h and an activation energy of 1.3 eV in air were found. By comparing the electrical device characteristics before and after stress, gate sinking, ohmic contact degradation, and hot electron degradation were found to be the major failure mechanisms. The stress induced platinum diffusion into the semiconductor was quantified by cross-section TEM.

Published
2004
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results