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This paper presents a high quality design of a 7th order Type-I Chebyshev low-pass filter (LPF) based on a stepped-impedance (SI) metamaterialized microstrip. The respective methodology involves embedding split ring resonators (SRRs) in addition to complementary split ring resonators (CSRRs) in filter design. The introduced metamaterialized filter manifestd better characteristics than in the conventional filter design and in some other availablefilter designs achieving lower insertion loss and appreciable size reduction. In this metamaterialized filter, miniaturization has been attained through implanting rectangular SRRs on top of the microstrip line besides etching squared CSRRs in its ground plane forming a defected ground structure (DGS). The design shows voltage standing wave ratios (VSWRs) of less than 1.05 in the pass-band interval yielding flattest pass-band with clear impedance matching. The shown group delay (GD) pattern is almost constant of around 0.5ns. Roger substrate material (RO3210) has been utilized with dielectric constant 10.2, substrate thickness 1.27mm, and thickness of microstrip conductor 0.035mm. Simulation outcomes have been obtained using the Ansoft High Frequency Structure Simulator (HFSS) package that is based on finite element method (FEM). The filter is applicable in most microwave (MW) and RF systems.

This paper introduces several miniaturized symmetrical designs of high selectivity metamaterialized low-pass filters (LPFs) based on a stepped-impedance (SI) 3rd order Type-I Chebyshev LPF prototype. The pass-band interval of the prototype design manifests a nearly constant group delay (GD) ranging between 0.4–0.45 ns with lower level of ripples. It further exhibits voltage standing wave ratios (VSWRs) starting at value 1 and keeping on a reasonable level of impedance matching. To ensure for considerable metamaterialized LPFs designs, the methodology behind this work has resorted to exploit: split ring resonators (SRRs), complementary split ring resonators (CSRRs), besides open stubs (OSs). Qualities such as sharp cutoff, high selectivity, substantial size reduction, and low insertion loss, have all been achieved. The designs were applied on the Roger substrate material (RO3210) with dielectric constant of 10.2, substrate thickness of 1.27 mm, thickness of microstrip conductor of 0.035 mm, then simulated using the package Ansoft High Frequency Structure Simulator (HFSS). The applications field of these filters involves most microwave (MW) communication systems in diverse civil and military horizons.

This paper presents compact dual-band band-pass filters (BPFs) using microstrip transmission lines (TLs) loaded with metallic via holes (MVHs). The primary goals of the proposed design are to get size reduction and dual-band frequency response. An end-coupled line dual-band BPF with better size reduction has been obtained using MVHs as a single negative (SNG) metamaterial (MTM) component to achieve negative relative permittivity (ɛ r ). This component is adequate for designing dual-band BPFs to operate at 4.1 GHz and 6 GHz resonant frequencies. To the best knowledge of the authors of this work, “Dual-” band BPF based on MVH has not been experienced yet by any other work in the literature. The filters structure length is as small as one third of wavelength. The filters have been designed with a fractional bandwidth (δ) that exceeds 10% at the resonant frequencies. Numerical observations of the microstrip TL and end-coupled BPFs designs have all been discussed. Simulations were done by HFSS software and implemented on the substrate Roger RO3210 with dielectric constant of 10.8 and dielectric substrate height of 1.27 mm. These filters are convenient for most common microwave applications.