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18 results on '"Duerinckx, Filip"'

3. Electrical and optical simulation of nPERT solar cells with epitaxially grown emitters

Author

Filipič, Miha, primary, Payo, Maria Recaman, additional, Bearda, Twan, additional, Depauw, Valerie, additional, Radhakrishnan, Hariharsudan Sivaramakrishnan, additional, Van Nieuwenhuysen, Kris, additional, Filipek, Izabela Kuzma, additional, Duerinckx, Filip, additional, Debucquoy, Maarten, additional, Gordon, Ivan, additional, Szlufcik, Jozef, additional, and Poortmans, Jef, additional

Published
2017
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4. Excellent via passivation and high open circuit voltage for large-area n-type MWT-PERT silicon solar cells

Author

Chen, Jia, primary, Singh, Sukhvinder, additional, Heide, Arvid van der, additional, Duerinckx, Filip, additional, Razzaq, Arsalan, additional, Cornagliotti, Emanuele, additional, Uruena, Angel, additional, Tous, Loic, additional, Russell, Richard, additional, Govaerts, Jonathan, additional, Gordon, Ivan, additional, Dewallef, Stefan, additional, Poortmans, Jef, additional, and Szlufcik, Jozef, additional

Published
2017
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7. Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping

Author

Kuzma-Filipek, Izabela, primary, Recaman-Payo, Maria, additional, Li, Yuandong, additional, Hajjiah, Ali, additional, Duerinckx, Filip, additional, Cornagliotti, Emanuele, additional, Castro, Angel Uruena De, additional, Sharma, Aashish, additional, Borgers, Tom, additional, Russell, Richard, additional, Tous, Loic, additional, John, Joachim, additional, Haslinger, Michael, additional, Aleman, Monica, additional, and Szlufcik, Jozef, additional

Published
2015
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8. Non-contacting Busbars for Advanced Cell Structures Using Low Temperature Copper Paste

Author

Wood, Don, primary, Kuzma-Filipek, Izabela, additional, Russell, Richard, additional, Duerinckx, Filip, additional, Powell, Nick, additional, Zambova, Adriana, additional, Chislea, Brian, additional, Chevalier, Pierre, additional, Boulord, Caroline, additional, Beucher, Alexandre, additional, Zeghers, Nicolas, additional, Szlufcik, Jozef, additional, and Beaucarne, Guy, additional

Published
2015
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10. Passivated Busbars from Screen-printed Low-temperature Copper Paste

Author

Wood, Don, primary, Kuzma-Filipek, Izabela, additional, Russell, Richard, additional, Duerinckx, Filip, additional, Powell, Nick, additional, Zambova, Adriana, additional, Chislea, Brian, additional, Chevalier, Pierre, additional, Boulord, Caroline, additional, Beucher, Alexandre, additional, Zeghers, Nicolas, additional, Deng, WeiWei, additional, Feng, Zhiqiang, additional, Verlinden, Pierre, additional, Szlufcik, Jozef, additional, and Beaucarne, Guy, additional

Published
2014
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11. Large-area Hybrid Silicon Heterojunction Solar Cells with Ni/Cu Plated Front Contacts

Author

Tous, Loic, primary, Granata, Stefano Nicola, additional, Rouhi, Alireza, additional, Lerat, Jean-François, additional, Emeraud, Thierry, additional, Nicolas, Silvia Martin de, additional, Pletzer, Tobias Markus, additional, Labie, Riet, additional, Aleman, Monica, additional, Russell, Richard, additional, John, Joachim, additional, Duerinckx, Filip, additional, Szlufcik, Jozef, additional, De Wolf, Stefaan, additional, Ballif, Christophe, additional, Mertens, Robert, additional, and Poortmans, Jef, additional

Published
2014
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12. Deposition of a SiOx Film Showing Enhanced Surface Passivation

Author

Descamps, Pierre, primary, Asad, Salman Syed, additional, Kaiser, Vincent, additional, Campeol, Frederik, additional, Kuzma-Filipek, Izabela, additional, Duerinckx, Filip, additional, Szlufcik, Jozef, additional, Flandre, Denis, additional, Kotipalli, Raja, additional, Delamare, Romain, additional, and Beaucarne, Guy, additional

Published
2014
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16. Large-area bifacial n-TOPCon solar cells with in situ phosphorus-doped LPCVD poly-Si passivating contacts

Author

Meriç Fırat, Hariharsudan Sivaramakrishnan Radhakrishnan, María Recamán Payo, Patrick Choulat, Hussein Badran, Arvid van der Heide, Jonathan Govaerts, Filip Duerinckx, Loic Tous, Ali Hajjiah, Jef Poortmans, FIRAT, Meric, Radhakrishnan, Hariharsudan Sivaramakrishnan, Payo, Maria Recaman, CHOULAT, Patrick, Badran, Hussein, VAN DER HEIDE, Arvid, GOVAERTS, Jonathan, DUERINCKX, Filip, TOUS, Loic, Hajjiah, Ali, and POORTMANS, Jef

Subjects
Solar cells, Technology, Science & Technology, Energy & Fuels, Renewable Energy, Sustainability and the Environment, Physics, Materials Science, LPCVD, Materials Science, Multidisciplinary, POLYCRYSTALLINE SILICON, Physics, Applied, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Passivating contacts, Polysilicon, In situ phosphorus doping, Physical Sciences, TOPCon
Abstract

The potential of passivating contacts incorporating in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films grown by low pressure chemical vapor deposition (LPCVD) is demonstrated in this work by integrating these layers at the rear side of large-area (241.3 cm(2)) bifacial n-type Tunnel Oxide Passivated Contact (nTOPCon) solar cells with diffused front emitter and screen-printed contacts. In situ doped poly-Si films are studied as their use could simplify the production of industrial n-TOPCon solar cells compared to the common approach relying on ex situ doping of intrinsic LPCVD poly-Si films. The developed poly-Si passivating contacts exhibited excellent characteristics with low recombination current densities in passivated and screen-printing metallized regions down to 2.3 fA/cm(2) and 65.8 fA/cm(2), respectively, and a low contact resistivity of 2.0 m Omega.cm(2). For reaching the best passivating contact characteristics and high solar cell efficiencies, a poly-Si film thickness of 150-200 nm was found to be optimal while a polished rear surface morphology was found to be beneficial. The best solar cell reached a certified power conversion efficiency of 23.01% along with a high open circuit voltage of 691.7 mV, enabled by the passivating contacts with the in situ doped poly-Si films. 1-cell glass-glass laminates were also fabricated with the developed solar cells, which showed no loss in their power output both upon 400 thermal cycles and after 1000 h of damp heat testing. Lastly, a roadmap is presented, indicating strategies to achieve efficiencies up to 25.5% with n-TOPCon solar cells incorporating the in situ P-doped LPCVD poly-Si films. The authors would like to acknowledge Sukhvinder Singh from Imec and Rajiv Sharma from KU Leuven for the valuable discussions and their help with the sample fabrication. This work was supported by the European Union’s Horizon2020 Programme for research, technological development, and demonstration [grant number 857793]; and by the Kuwait Foundation for the Advancement of Sciences [grant number CN18-15 EE-01].

Published
2022
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17. Excellent via passivation and high open circuit voltage for large-area n-type MWT-PERT silicon solar cells

Author

Jia Chen, A. Uruena, Arsalan Razzaq, Jozef Szlufcik, Stefan Dewallef, S. Singh, Loic Tous, Emanuele Cornagliotti, Jef Poortmans, Ivan Gordon, Richard Russell, Arvid van der Heide, Jonathan Govaerts, Filip Duerinckx, Chen, Jia, Singh, Sukhvinder, VAN DER HEIDE, Arvid, DUERINCKX, Filip, Razzaq, Arsalan, Cornagliotti, Emanuele, Uruena, Angel, TOUS, Loic, Russell, Richard, GOVAERTS, Jonathan, GORDON, Ivan, Dewallef, Stefan, POORTMANS, Jef, and Szlufcik, Jozef

Subjects
010302 applied physics, Interconnection, Materials science, Silicon, Passivation, business.industry, Open-circuit voltage, Electrical engineering, chemistry.chemical_element, 02 engineering and technology, MWT PERT solar cells, via passivation, plating, screen-printing, module reliability, 021001 nanoscience & nanotechnology, 01 natural sciences, Reliability (semiconductor), chemistry, Laser damage, Plating, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business
Abstract

In this work, we improved the performance of the MWT-PERT solar cells focusing on increasing their V-oc by combining the MWT concept with n-PERT technology. The impact of different post-laser treatments on the via surface morphology and the via passivation was investigated. KOH texturing can partially remove the laser damage in the via and reduce the via SRV to 1000 cm/s. With optimized post-laser treatment and via passivation, an average V-oc of 685mV was achieved for our large-area n-type MWT-PERT cells. Front Ni/Cu plating and rear Ag and Al screen-printing were used for the metallisation, the compatibility of this hybrid metallisation scheme was studied. Using industrial solder-through interconnection technology, the cell was integrated in a laminate reaching a one-cell module efficiency at 20%. The reliability of the one-cell modules was preliminarily investigated in an extended reliability test. (C) 2017 The Authors. Published by Elsevier Ltd. The authors gratefully acknowledge the financial support of the PV4FACADES project (Solar-Era.net) and Imec's industrial affiliation program for Photovoltaics (IIAP-PV).

Published
2017
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18. Efficiency gain in plated bifacial n-type PERT cells by means of a selective emitter approach using selective epitaxy

Author

Jozef Szlufcik, Filip Duerinckx, Richard Russell, Izabela Kuzma Filipek, Jef Poortmans, Maria Recaman Payo, Sukhvinder Singh, Yuandong Li, Recamán Payo, María, Li, Yuandong, Russell, Richard, Singh, Sukhvinder, Kuzma Filipek, Izabela, DUERINCKX, Filip, Szlufcik, Jozef, and POORTMANS, Jef

Subjects
Technology, Materials science, Energy & Fuels, POLYSILICON, Materials Science, Materials Science, Multidisciplinary, 02 engineering and technology, Dielectric, Blanket, 010402 general chemistry, Epitaxy, 01 natural sciences, Physics, Applied, Passivating contact, Plating, Plating Bifacial solar cell, OPTIMIZATION, Common emitter, Science & Technology, Laser ablation, p-Type contact, Renewable Energy, Sustainability and the Environment, business.industry, Physics, Doping, PASSIVATING CONTACTS, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Bifacial solar cell, Homogeneous, METAL, Physical Sciences, SI SOLAR-CELLS, Selective epitaxy, Optoelectronics, RESISTIVITY, 0210 nano-technology, business, Layer (electronics), RESISTANCE
Abstract

This work evaluates the potential of selective epitaxy to mitigate the recombination losses at the p-type contact regions of plated bifacial n-type PERT cells. Following the growth of a 500 nm, 2.5 10(19) cm(-3) boron doped epitaxial layer at the emitter contact regions defined by laser ablation of the passivating dielectrics, both an increase in V-oc (+6 mV) and FF (+ 1% absolute) are measured in the final cells compared to the reference with a homogeneous diffused emitter. These results come with an average efficiency gain of 0.3 and 0.5% absolute for front and rear side illumination, respectively. If the diffused, blanket emitter in the passivated regions is replaced by a thicker, lowly doped epitaxial profile (3 mu m, 5 10(18) cm(-3)) to further reduce recombination, an additional rise in implied V-oc after metallization of 10 mV is estimated. This increase would be the result of a reduction in J(0,pass, emitter) (down to 6 fA/cm(2)) and J(0,plated, emitter) (down to 1967 fA/cm(2)).

Published
2020
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