Search

Dielectric energy storage capacitors are promising avenues for high power density and fast charge/discharge applications. This study focused on the deposition of Bi 3.25 La 0.75 Ti 3 O 12 (BLT) films onto Pt/Ti/SiO 2 /Si substrates by a sol-gel technology. Through the synergistic strategy of interface engineering and the preferred orientation of BLT film, the residual polarization was minimized, and the breakdown field strength was enhanced. As a result, the recoverable energy density (U rec) was significantly improved to 62.97 J/cm3 with a high energy storage efficiency (η) of 85.88 %. Notably, the synthesized BLT film exhibited excellent temperature (25–150 °C) and frequency (100 Hz-10 kHz) stability of U rec (>30 J/cm3) and η (>75 %) at ∼2200 kV/cm. The finding demonstrates the potential of BLT thin film as a lead-free material for the next generation of pulse power capacitors. Overall, the synergistic approach of interface engineering and preferred orientation proves to be an effective way to improve the performance of dielectric energy storage capacitors. [ABSTRACT FROM AUTHOR]

NaNbO 3 (NN)-based dielectric ceramics for energy storage have garnered significant interest due to their high saturation polarization, low residual polarization, and superior breakdown strength (E b). However, the low recoverable energy storage density (W rec) and efficiency (η) significantly limited their practical application. Herein, BiFeO 3 (BF) was incorporated into NN to optimize the energy storage performance. The NN-BF ceramics exhibited pronounced antiferroelectric (AFE) relaxor phase, alongside grain size reduction and E b enhancement, which contributed to a significant increase of W rec and η. Specially, the optimum W rec of 4.43 J/cm³ and η of 71.51 % were achieved at the composition of 0.9NN-0.1BF. Besides, stable energy storage performance was maintained over a wide temperature range (20–120 °C). These results highlight the potential of NN-BF relaxor AFE ceramics as promising candidates for high-performance energy storage applications. [ABSTRACT FROM AUTHOR]