252 results on '"Vandervorst, W."'
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2. Inorganic material profiling using Arn+ cluster: Can we achieve high quality profiles?
3. Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation
4. Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures
5. Calibration of PIXE yields using Cu as a reference
6. High-throughput ion beam analysis at imec
7. Mass discrimination in elastic recoil detection analysis and its application to Al2O3 on MoS2
8. Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts
9. X-ray absorption in pillar shaped transmission electron microscopy specimens
10. Diamond scanning probes with sub-nanometer resolution for advanced nanoelectronics device characterization
11. Mass calibration of the energy axis in ToF-E elastic recoil detection analysis
12. Outwitting the series resistance in scanning spreading resistance microscopy
13. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
14. Ion-induced pattern formation on indium tin oxide for alignment of liquid crystals
15. Overcoated diamond tips for nanometer-scale semiconductor device characterization
16. Dislocation density and tetragonal distortion of a GaN epilayer on Si (1 1 1): A comparative RBS/C and TEM study
17. Calibration of PIXE yields using binary thin films on Si
18. Diamond nanoprobes for electrical probing of nanoelectronics device structures
19. Impact of the apex of an elongated dielectric tip upon its light absorption properties
20. Growth rate for the selective epitaxial growth of III–V compounds inside submicron shallow-trench-isolation trenches on Si (001) substrates by MOVPE: Modeling and experiments
21. Optimal laser positioning for laser-assisted atom probe tomography
22. Nanoprober-based EBIC measurements for nanowire transistor structures
23. Quantitative three-dimensional carrier mapping in nanowire-based transistors using scanning spreading resistance microscopy
24. TiN scanning probes for electrical profiling of nanoelectronics device structures
25. Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6
26. In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substrates
27. Atom-probe for FinFET dopant characterization
28. Characteristics of cross-sectional atom probe analysis on semiconductor structures
29. Atom probe analysis of a 3D finFET with high- k metal gate
30. Chemical effects during ripple formation with isobaric ion beams
31. ToF–SIMS and XPS study of ion implanted 248 nm deep ultraviolet (DUV) photoresist
32. Electrical demonstration of thermally stable Ni silicides on Si 1−xC x epitaxial layers
33. Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
34. Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology
35. Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane, silane and trisilane
36. Considerations about multiple and plural scattering in heavy-ion low-energy ERDA
37. Failure mechanisms of silicon-based atom-probe tips
38. High- k dielectrics for future generation memory devices (Invited Paper)
39. New SPM concept for accurate and repeatable tip positioning
40. On the analysis of the activation mechanisms of sub-melt laser anneals
41. Characterization of post-etched photoresist and residues by various analytical techniques
42. Ripple morphologies on ion irradiated Si 1− xGe x
43. Towards quantitative depth profiling with high spatial and high depth resolution
44. Cesium near-surface concentration in low energy, negative mode dynamic SIMS
45. The fate of the (reactive) primary ion: Sputtering and desorption
46. Semiconductor profiling with sub-nm resolution: Challenges and solutions
47. Low-energy heavy-ion TOF-ERDA setup for quantitative depth profiling of thin films
48. High Ge content SGOI substrates obtained by the Ge condensation technique: A template for growth of strained epitaxial Ge
49. Depth resolution optimization for low-energy ERDA
50. Time-of-flight telescope for heavy-ion RBS
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