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A semitechnical route (optimized by BASF SE) to synthesize MOF-74/174-M (M = Mg 2+ , Ni 2+ ) efficiently in ton-scale production is presented with the goal of mobile and stationary gas storage applications especially for hydrogen as future energy carrier. In addition, a new member of these series of materials, MOF-184-M (M = Mg 2+ , Ni 2+ ) is introduced using ligand exchange strategy in order to produce a more porous analogue (possessing large aperture) without loss of crystallinity. This family comprising MOF-74/174/184 are characterized systematically for hydrogen adsorption properties by volumetric measurements with a Sieverts’ apparatus. Replacing the linker by a longer one results in an increase of the BET area from 984 to 3154 m 2 /g and an enhancement of the excess cryogenic (77 K) hydrogen storage capacity from 1.8 to 4.7 wt%. The heat of adsorption of linker exchanged MOF-174/184 (as a function of uptake) shows similar values to the parent MOF-74, indicating successful construction of expanded MOFs in large scale production. Finally, a usable capacity of these MOFs is investigated for mobile application, revealing that the increasing surface area without strong binding metal sites through longer linker exchange is one of important parameters for improving usable capacity. [ABSTRACT FROM AUTHOR]

High-performance MnBi isotropic magnets have been prepared via spark-plasma-sintering, which achieves bulk magnets with high densification and little grain growth. The sintered magnets in this work show high saturation magnetization at high temperatures. Moreover, hard magnetic behavior is still present after heating beyond its phase transition temperature. The exceptional thermal stability could be due to the observed fine-grained microstructure. The analysis of temperature dependence of coercivity behavior demonstrates that the magnetization process can be explained by nucleation model. [ABSTRACT FROM AUTHOR]

[Display omitted] Due to their chemical inertness and high-temperature stability, atomic layer deposited (ALD) oxide thin films emerged as an attractive copper encapsulation, passivation, and protection technology. Several types of high-k dielectrics, which are robust insulators, can be deposited by ALD. Hence, a successful encapsulation process electrically isolates the underlying film and active elements from the environment, as a side effect. To electrically interface such encapsulated structures, a reliable method that selectively and locally removes the encapsulation film is required. Here, the study focused on the effectiveness of laser drilling and plasma etching of Al 2 O 3 thin films deposited via ALD, both in silico and experimentally. Results have shown that the CO 2 laser drilling alone is insufficient to remove the Al 2 O 3 thin films. However, plasma etching successfully removes the encapsulation layer, providing a clean interface for conductive vias. Results are essential for future ALD layer applications in the encapsulation of copper and other critical components in semiconductor fabrication processes. [ABSTRACT FROM AUTHOR]