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Your search keyword '"Pinel S"' showing total 6 results
Start Over Author "Pinel S" Publisher elsevier b.v.
6 results on '"Pinel S"'

1. PDTeam's project: Targeting to improve PDT selectivity

Author

Achard, M., Acherar, S., Althuser, P., André, J.C., Arnoux, P., Barberi-Heyob, M., Baros, F., Bastogne, T., Bonisegna, C., Boura, C., Colombeau, L., Frochot, C., Jouan-Hureaux, V., Goria, S., Landon, J., Gazzali, A. Mohd, Pinel, S., Roques-Carmes, T., Thomas, N., Toussaint, M., Vanderesse, R., and Youssef, Z.

Published
2017
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4. A branching process model of heterogeneous DNA damages caused by radiotherapy in in vitro cell cultures.

Author

Bastogne, T., Marchand, J.-L., Pinel, S., and Vallois, P.

Subjects
*CANCER radiotherapy, *DNA damage, *IN vitro studies, *CANCER cell culture, *COMPUTER simulation, *BRANCHING processes
Abstract

This paper deals with the dynamic modeling and simulation of cell damage heterogeneity and associated mutant cell phenotypes in the therapeutic responses of cancer cell populations submitted to a radiotherapy session during in vitro assays. Each cell is described by a finite number of phenotypic states with possible transitions between them. The population dynamics is then given by an age-dependent multi-type branching process. From this representation, we obtain formulas for the average size of the global survival population as well as the one of subpopulations associated with 10 mutation phenotypes. The proposed model has been implemented into Matlab © and the numerical results corroborate the ability of the model to reproduce four major types of cell responses: delayed growth, anti-proliferative, cytostatic and cytotoxic. [ABSTRACT FROM AUTHOR]

Published
2017
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5. Electrical qualification of new ultrathin integration techniques

Author

Cazarré, A., Lépinois, F., Marty, A., Pinel, S., Tasselli, J., Bailbé, J.P., Morante, J.R., and Murray, F.

Subjects
*BIPOLAR transistors, *PACKAGING
Abstract

The aim of this paper is to analyze the feasibility of ultrathin packages through the electrical qualification of the technological process used, i.e. mechanical lapping. It considers polysilicon bipolar transistors which thickness can reach values lower than 10 μm. Forward mode and reverse mode characterizations show no significant degradation of pertinent characteristics, thus allowing to find applications in new compact packaging concept. [Copyright &y& Elsevier]

Published
2003

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