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Abstract: The influence of temperature on the open-circuit voltage (VOC) of crystalline silicon solar cells is analysed using different semiconductor temperature models with different levels of accuracy. The strongest influence besides the direct dependence of the intrinsic carrier concentration on temperature results from the temperature dependence of the band gap and the effective density of states, while the incomplete ionization plays a minor role for the implied voltage. However incomplete ionization can play an important role for the external voltage at temperatures below 50K due to imperfect selectivity of the emitter and back surface field. The observed saturation of VOC towards low temperatures is caused by the effective density of states. The temperature dependence from 80K to 300K and the intensity dependence as a function of temperature and illumination density were measured on a silicon wafer solar cell resulting in a maximum voltage of 1012mV at T=85.8K. The measured values could be well described by theory. [Copyright &y& Elsevier]

Abstract: We offer a complete structural and optical study of samples containing silicon nanocrystals (Si-NCs) embedded in SiO2/SiON multilayers, varying the oxynitride layer thickness from 2.5 to 7nm. Using energy-filtered transmission electron microscopy we have determined the size distribution of the precipitated Si-nanoaggregates. Raman scattering measurements were used to investigate the Si-NC size and crystalline quality. By combining both techniques, the nanoaggregate crystalline degree has been evaluated, with values around 50% for all the samples. Photoluminescence spectroscopy has shown a blueshift of the emission at smaller NC sizes, presenting the sample with Si-NCs of 3.9nm the best emission properties. [Copyright &y& Elsevier]