1. Electrical and thermal failure modes of 600 V p-gate GaN HEMTs.
- Author
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Oeder, Thorsten, Castellazzi, Alberto, and Pfost, Martin
- Subjects
- *
MODULATION-doped field-effect transistors , *THERMAL analysis , *FAILURE mode & effects analysis , *GATE array circuits , *GALLIUM nitride , *DOPED semiconductors , *SHORT circuits - Abstract
A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations. The electrical failure mode seems to be an electrical field breakdown in the structure which is caused by excessive carrier concentration, rather than primary thermal generated. Accordingly, a thermal failure mode is observed, which features a distinctive behaviour and seems to be similar to schottky-gate HEMTs. Concerning the electrical failure mode, a specific p-gate HEMT short-circuit safe operating area (SCSOA) is presented as a novelty. However, a short-circuit capability of up to 520 V can be achieved, regarding the design of the gate-drive circuit. [ABSTRACT FROM AUTHOR]
- Published
- 2017
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