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The paper presents а comparison of analytical performances of inductively coupled plasma mass spectrometry (ICP-MS) and inductively coupled plasma atomic emission spectrometry (ICP-AES) for trace analysis of high purity bismuth and bismuth oxide. Matrix effects in the ICP-MS and ICP-AES methods were studied as a function of Bi concentration, ICP power and nebulizer flow rate. For ICP-MS the strong dependence of the matrix effects versus the atomic mass of analytes was observed. For ICP-AES the minimal matrix effects were achieved for spectral lines of analytes with low excitation potentials. The optimum degree of sample dilution providing minimum values of the limits of detection (LODs) was chosen. Both methods let us to reach LODs from n·10 −7 to n·10 −4 wt% for more than 50 trace elements. For most elements the LODs of ICP-MS were lower in comparison to ICP-AES. Validation of accuracy of the developed techniques was performed by “added-found” experiments and by comparison of the results of ICP-MS and ICP-AES analysis of high-purity bismuth oxide. [ABSTRACT FROM AUTHOR]

The paper discusses the development of optical-emission and mass-spectral with inductively coupled plasma (ICP-OES/MS) analysis procedures for determination of traces in cadmium. These procedures are based on the preliminary concentration of traces by selective volatilization of cadmium in vacuum through the film of its own oxide and the subsequent ICP-OES/MS analysis of concentrate. The relative concentration coefficient for the entire array of the experimental data is at least 150. The trace limits of detection (LODs) have been evaluated for the developed ICP-OES and ICP-MS analysis procedures. The ICP-OES method allows to determine 43 traces (Ag, Al, As, Au, B, Ba, Be, Ca, Ce, Co, Cr, Cu, Dy, Er, Fe, Ga, Gd, Hf, Ho, K, La, Li, Lu, Mg, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Ti, V, W, Y, Yb, Zn, Zr) at the concentration level from 0.1 to 40 ng·g−1. At the same time implementation of the ICP-MS method provides data about 41 impurities (Ag, Al, As, Au, B, Ba, Be, Bi, Ce, Co, Cr, Cu, Dy, Er, Ga, Gd, Hf, Ho, In, La, Lu, Mn, Mo, Nb, Ni, Pb, Re, Sb, Sm, Sn, Sr, Ta, Tb, Te, Ti, V, W, Y, Yb, Zn, Zr) with LODs from 0.002 to 10 ng·g−1. Unlabelled Image • Quality control of high-purity cadmium for electronic application. • Preconcentration of traces using cadmium selective volatilization in vacuum. • Multi-element determination of traces by ICP-OES and ICP-MS. [ABSTRACT FROM AUTHOR]