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In this work, we report on the effect of rapid thermal annealing on GaAs 0.9− x N x Sb 0.1 structures, grown by molecular beam epitaxy, using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on two sets of GaAs 0.9− x N x Sb 0.1 as-grown and annealed samples with small nitrogen content ( x up to 0.013). The results obtained from the ellipsometric data analysis allow us to extract the annealing effect on the pseudodielectric functions and the transition energies as function of nitrogen content. A blue shift of the E 0 transition was recorded, while the higher E 1 , E 1 + Δ 1 and E 0 ′ transition energies are not affected with post-growth annealing. The nitrogen level E N , obtained from the band anticrossing model fit to the E 0 transition energies values, is found to increase upon annealing from 1.60 (±0.06) eV to 1.80 (±0.08) eV. The resulting calculated electron effective mass is found to decrease with annealing the GaAs 0.9− x N x Sb 0.1 structures. [ABSTRACT FROM AUTHOR]