31 results on '"Juhel, M."'
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2. Improvement of etching and cleaning methods for integration of raised source and drain in FD-SOI technologies
3. Ni(Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation
4. Pt redistribution in N-MOS transistors during Ni salicide process
5. Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis
6. New generation of reactive pre-clean prior to barrier–seed deposition to preserve ULK integrity
7. Boron out-diffusion mechanism in oxide and nitride CMOS sidewall spacer: Impact of the materials properties
8. Self-aligned nickel–platinum silicide oxidation
9. Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
10. Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates
11. Post electrochemical Cu deposition anneal impact on stress-voiding in individual vias
12. Impact of surface preparation on nickel–platinum alloy silicide phase formation
13. SIMS depth profiling of boron ultra shallow junctions using oblique O 2+ beams down to 150 eV
14. Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node
15. Poly-Si gate engineering for advanced CMOS transistors by germanium implantation
16. SIMS depth profiling of SiGe:C structures in test pattern areas using low energy cesium with a Cameca IMS Wf
17. SIMS depth profiling of boron ultra shallow junctions using oblique O2 + beams down to 150eV
18. Traitement par laser pulse de couches minces d'al deposees sur acier
19. Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
20. High carbon doping of GaAs using trisdimethylaminoarsenic and trimethylgallium in chemical beam epitaxy
21. Quasi-planar GaAs heterojunction bipolar transistor device entirely grown by chemical beam epitaxy
22. CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
23. Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
24. Molecular beam epitaxy of AlGaAsSb system for 1.55 μm Bragg mirrors
25. Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
26. Two-dimensional quantitative mapping of arsenic in nanometer-scale silicon devices using STEM EELS–EDX spectroscopy
27. Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology
28. Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors.
29. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors.
30. Low thermal budget for Si and SiGe surface preparation for FD-SOI technology.
31. Trench filling with phosphorus-doped monocrystalline and polycrystalline silicon.
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