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• A systematic study on the pilot-scale fabrication of NF membranes and modules. • The NF module exhibits a flux of 75 L m−2 h−1 and MgSO 4 rejection of 95% at 6 bar. • The NF modules hold bright potential in potable and mineral water treatment. Few studies have reported on the detail of the mass production process of nanofiltration (NF) membranes and modules due to technical confidentiality. This work presents a procedure of fabrication of NF membranes and modules on the pilot scale. Thin film composite (TFC) NF flat-sheet membranes of 300 mm width were continuously fabricated via custom-designed equipment. The fabrication parameters and their effects on NF performance were systematically investigated. The optimized conditions parameters were achieved for excellent NF modules' performance. The modules show over 75 L m−2 h−1 flux at 6 bar and over 95% MgSO 4 rejection. This study may provide insightful guidelines for the scale-up of NF membranes for water treatment and other applications. [ABSTRACT FROM AUTHOR]

Abstract The INFN CSN5 "TIMESPOT" project aims at the development and implementation of a complete integrated tracking system featuring very high precision both in space and in time for every pixel. Within this framework we are developing 3D pixel sensors optimized for timing, while retaining their usual advantages of low depletion voltage, extreme radiation hardness, and active edges. The pixel geometries are being optimized in terms of size, electrode configuration and shape. In particular, trenched electrodes are used instead of columns, so as to achieve more uniform electric and weighting field profiles. No established technology exists for 3D sensors with trenched electrodes, so we have developed and tested the necessary process steps. In this paper we report the main design and fabrication issues and selected results from TCAD simulations. Highlights • We report on 3D pixel sensors with trenched electrodes optimized for timing. • We thoroughly discussed the design and technological aspects. • We studied with TCAD the trade-off between intrinsic speed and pixel capacitance. • We demonstrated the technological feasibility of the proposed geometries. [ABSTRACT FROM AUTHOR]

• Systematically introduced and evaluated the fabrication technology of IPMCs. • Deeply analyzed the relationship between fabrication technology and performance. • The applications of IPMCs in actuation robots and sensing systems are summarized. • This work contributes to the development of materials with desirable properties. Intelligent materials are one of the important directions in the development of modern high-tech new materials, realizing structural functionalization and functional diversification. As a new type of intelligent material, ionic polymer metal composite (IPMC) artificial muscle is considered as an ideal material to develop the next generation of flexible robots. In this paper, the working principle of IPMC is analyzed from the microscopic perspective. Subsequently, the fabrication technologies of IPMC are divided into two categories according to their complexity: single fabrication technology and combined fabrication technology, and the effective combination of several methods in the combined fabrication technology is highlighted. The properties of IPMC prepared by different methods are analyzed and compared. The research advances of IPMC in flexible actuation robots and intelligent sensing systems are analyzed in detail. Finally, the future development directions are discussed and foreseen. This paper will provide guidance for the fabrication of high performance IPMC and lay the theoretical foundation for the design and application of IPMC. [ABSTRACT FROM AUTHOR]

The purpose of this research is to fabricate an n-type semiconductor through a combustion flame with addition of nitrogen and to determine the optimum conditions for the synthesis. Although p-type diamond semiconductors, in which holes carry positive charges, can be fabricated at present, methods for fabricating n-type diamond semiconductors have not yet been established to such an extent as to yield substantial results. We have shown that nitrogen atoms form covalent bonds with carbon atoms, which have sp 3 hybrid orbitals in the films and the synthesized diamond doped with nitrogen exhibits the electronic characteristics of an n-type semiconductor at low temperature range (423–573 K), and carbon atoms in the synthesized film have sp 3 hybrid orbitals. In addition, we have evaluated the semiconducting properties of diamond films. In the intrinsic semiconductor region, the logarithmic plot of the volume resistivity of the nitrogen-doped diamond films increases almost linearly with decreasing temperature. The volume resistivity of 1.0%-nitrogen-doped synthetic diamond film is shown to be lower than that of 0.5%-nitrogen-doped synthetic diamond film. The optimum synthesis condition for these films for semiconductor applications corresponds to equivalence ratio of 2.55 and nitrogen addition rate of less than 1.0%. Under these conditions the synthesis facilitates the doping of nitrogen and suppresses amorphous carbon generation in the diamond film. [ABSTRACT FROM AUTHOR]

Graphene (G)-based composite materials have been widely explored for the sensing applications ascribing to their atom-thick two-dimensional conjugated structures, high conductivity, large specific surface areas and controlled modification. With the enormous advantages of film structure, G-based composite films (GCFs), prepared by combining G with different functional nanomaterials (noble metals, metal compounds, carbon materials, polymer materials, etc.), show unique optical, mechanical, electrical, chemical, and catalytic properties. Therefore, great quantities of sensors with high sensitivity, selectivity, and stability have been created in recent years. In this review, we focus on the recent advances in the fabrication technologies of GCFs and their specific sensing applications. In addition, the relationship between the properties of GCFs and sensing performance is concentrated on. Finally, the personal perspectives and key challenges of GCFs are mentioned in the hope to shed a light on their potential future research directions. [ABSTRACT FROM AUTHOR]

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The presentation describes the performance of novel n-in-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, some feedback from preliminary results of the first beam test will be discussed. [ABSTRACT FROM AUTHOR]

We report on the 3-year INFN ATLAS–CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6” p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2×10 16 n eq cm −2 ). Pixel layouts compatible with present (for testing) and future (RD53 65 nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes. [ABSTRACT FROM AUTHOR]

In view of the LHC upgrade for the high luminosity phase (HL-LHC), the ATLAS experiment is planning to replace the inner detector with an all-silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FBK. [ABSTRACT FROM AUTHOR]

This paper reports on recent accomplishments and ongoing work of the ATLAS Planar Pixel Sensors R&D project. Special attention is given in particular to new testbeam results obtained with highly irradiated sensors, developments in the field of slim and active edges and first step towards prototypes of future pixel modules. [ABSTRACT FROM AUTHOR]

Abstract: This paper presents a flexible sensor based on photonics for measuring strain, curvatures and vibrations. This flexible sensor is composed by a Fiber Bragg Grating (FBG) embedded into polydimethylsiloxane (PDMS). The selected FBG resonates at the wavelength of 1552.37nm and is embedded before the curing for enabling a strong adhesion between both components. Few prototypes were fabricated and characterized. The measurements showed a maximum strain sensitivity of ≈400pm per 1% elongation, revealing to be sensitive to strain/bending forces and vibration. The measurements allowed to establish a predictable response for both static and dynamic behavior, corresponding to a resolution of ≈88pm per curvature degree. This flexible sensor also allowed high strain cycles and presented the linear behavior of ≈14pm°C-1 over the temperature range 20-110°C. The high-simplicity of the fabrication process results on low-cost with high-degree of reproducibility of their characteristics. [Copyright &y& Elsevier]

Abstract: In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the inner detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness. The edgeless technology would allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-on-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown. [Copyright &y& Elsevier]

Abstract: The development of n-on-p “edgeless” planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the “active edge” technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000fb−1) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach. [Copyright &y& Elsevier]

Abstract: In the presented work, the possibility of fabrication of ZnO single- and multi-nanofiber structures using a standard microelectronic device technology were studied. An innovative fabrication step, namely, selective wet chemical nanofibers etching through a photoresist mask, was used to define the active area, along with mesa etch in the Si/SiO2 substrate. Test structures in the configuration of a resistor and Schottky diode with chemically active electrospun ZnO nanofibers were prepared. The Ti/Au ohmic and Pt Schottky contacts were fabricated using a lift-off photolithography process. Optical and scanning electron microscopy studies were done to characterize ZnO nanofibers and topography of contacts. The measurements made for electrical characterization showed linear I–V dependence and saturation of the current for single ZnO nanofiber structures. [Copyright &y& Elsevier]

Abstract: The development of a Water Cooled Ceramic Breeder (WCCB) Test Blanket Module (TBM) is being performed as one of the most important steps toward DEMO blanket in Japan. For the TBM testing and evaluation toward DEMO blanket, the module fabrication technology development by a candidate structural material, reduced activation martensitic/ferritic steel, F82H, is one of the most critical items from the viewpoint of realization of TBM testing in ITER. In Japan, fabrication of a real scale first wall, side walls, a breeder pebble bed box and assembling of the first wall and side walls have succeeded. Recently, the real scale partial mockup of the back wall was fabricated. The fabrication procedure of the back wall, whose thickness is up to 90mm, was confirmed toward the fabrication of the real scale back wall by F82H. Important key technologies are almost clarified for the fabrication of the real scale TBM module mockup. From the view point of testing and evaluation, development of the technology of the blanket tritium recovery, development of advanced breeder and multiplier pebbles and the development of the blanket neutronics measurement technology are also performed. Also, tritium production and recovery test using D-T neutron in the Fusion Neutronics Source (FNS) facility has been started as the verification test of tritium production performance. This paper overviews the recent achievements of the development of the WCCB TBM in Japan. [Copyright &y& Elsevier]

Abstract: In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non-optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of , while requiring bias voltages in the order of 100V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation. [Copyright &y& Elsevier]

Abstract: In this study, a ZnO nanofiber biosensor design is reported. ZnO nanofibers were obtained by electrospinning process followed by calcination. As a novel fabrication method, amorphous thin film of AlN x deposited by reactive magnetron sputtering, was proposed as a protective and stabilizing layer in subsequent technological processes. This allowed to use photolithography techniques for fabrication of the electrospun ZnO nanofibers sensor structures which is first time reported. The wet etching of AlN protective layer, Ti/Au ohmic contacts to ZnO fibers and polyimide passivating film have completed the design. Topography of the sensor structure was investigated using AFM and SEM. I–V measurements made for electrical characterization of ohmic contacts and nanofibers in different solutions environments including biological agent are reported. [Copyright &y& Elsevier]

Abstract: As the primary candidate of ITER test blanket module (TBM) of Japan, development of water cooled ceramic breeder (WCCB) TBM is being performed. For installation of the TBMs in ITER, it is required to certify the quality of the TBMs. To certify the quality, it is necessary to show verifications of fabrication technique, fabrication capability and the integrity of prototypical size mockup in corresponding operation condition before the delivery of the TBM to ITER. This paper overviews the recent achievements of the fabrication technology development of the WCCB TBM in Japan. [Copyright &y& Elsevier]

Abstract: We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed. [Copyright &y& Elsevier]

Abstract: Recently, we presented a new 3D detector architecture aimed at simplifying the manufacturing process, making it more suitable for high-volume production. In particular, the proposed device features electrodes of one doping type only, e.g., n+ columns in a p-type substrate. In this paper we report on the fabrication at ITC-irst of the first batch of prototypes. The main issues related to the fabrication process along with preliminary results from the electrical characterization of different detectors and test structures are discussed. [Copyright &y& Elsevier]

Abstract: The 3D silicon radiation detectors are very promising devices to be used in environments requiring extreme radiation hardness, such as the super-LHC experiment at CERN. A drawback of this detector is the very long and non-standard fabrication process, which makes the mass production of these devices very critical. A possible simplification of the manufacturing process relies on a new type of 3D architecture, called 3D-single-type-column detector, that we have introduced in previous works. In this paper we report on the fabrication process of the first batch of detectors and on selected results from the electrical characterization of 3D test structures, covering leakage current, capacitance and breakdown voltage measurements. [Copyright &y& Elsevier]

Abstract: We report on JFET devices fabricated on high-resistivity silicon with a radiation detector technology. The problems affecting previous versions of these devices have been thoroughly investigated and solved by developing an improved fabrication process, which allows for a sizeable enhancement in the JFET performance. In this paper, the main features of the fabrication technology are presented and selected results from the electrical and noise characterization of transistors are discussed. [Copyright &y& Elsevier]

Abstract: We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed. [Copyright &y& Elsevier]

Abstract: A novel wafer-level fabrication technique for polymeric springs combined with a silicon proof mass is presented for applications in MEMS force sensors or scanning micromirrors. Furthermore, passive test structures for the determination of mechanical parameters of the polymer are integrated on the wafer during device fabrication. The test structures allow for chip scale process monitoring in respect to the material parameters. The large difference of material stiffness and thickness between the springs and the proof mass concentrates the entire mechanical deformation into the springs. Furthermore, the polymeric springs can be used as electrically isolated suspension for electrostatically levitated devices. Devices have been fabricated and characterized by means of frequency response analysis. Thereby, a polymeric suspension with a spring constant of 8.7N/m is presented, while the suspended structure itself features a spring constant of 140kN/m. Material properties of the spring material (SU-8 2025) were measured to be 2.45±0.6GPa, 27.2±2.2MPa and 13.8±3.2MPa/m, for Young''s modulus, the residual stress and the residual stress gradient, respectively. [Copyright &y& Elsevier]

Abstract: Pixel detectors for mammographic applications have been fabricated at ITC-irst on 800μm thick silicon wafers adopting a double side n+-on-n fabrication technology. The activity aims at increasing the X-ray detection efficiency in the energy range of interest minimizing the risk of electrical discharges in hybrid systems operating at high voltages. The detectors, having a layout compatible with the Medipix2 photon counting chip, feature two different design solutions for the p-isolation between neighboring n+-pixels. We report on the characterization of the fabrication process and on preliminary results of electrical measurements on full detectors and pixel test structures. In particular, we found that the detectors can be reliably operated above the full depletion voltage regardless of the isolation design, that however, impacts the performances in terms of current–voltage characteristics, single pixel currents, inter-pixel resistances and inter-pixel capacitances. [Copyright &y& Elsevier]

Abstract: We present a new 3D detector architecture aimed at simplifying the manufacturing process making it more suitable for high volume production. In particular, the proposed device features electrodes of one doping type only, e.g., columns in a p-type substrate. We report on TCAD simulation results providing deep insight into the static and dynamic behavior of this detector, highlighting its advantages and potential drawbacks. The fabrication process we intend to use is also described along with results from the morphological characterization of the most critical technological steps. [Copyright &y& Elsevier]

This review presents a brief overview of recent developments in miniaturization of analytical instruments utilizing microfabrication technology. The concept ‘Micro-Total Analysis Systems (μ-TAS)’, also termed ‘Lab-on-a-chip’, and the latest progresses in the development of microfabricated separation devices and on-chip detection techniques are discussed. Applications of micro-analytical methods to bioanalytical and pharmaceutical studies are also described, including chemical reactions, assays, and analytical separations of biomolecules in micro-scale. [Copyright &y& Elsevier]

We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source–follower configuration is introduced. [Copyright &y& Elsevier]

Elastic–porous sandwich structure with entangled metallic wire mesh (EMWM) is of particular interest, and is a complex and novel rigid–flexible heterogeneous material. This study introduced the fabrication technology and explored the shear failure behaviours of elastic–porous sandwich structures. The elastic–porous sandwich structure with different configurations such as the side structures, the core relative density and the thickness ratio of core/face-sheet on the failure behaviours were analysed by experimental shear tests. The experimental results demonstrated that the failure mode of the elastic–porous sandwich structure could be divided into four stages, that is linear, gradual-soft deformation, damage deformation, and stable damage failure. The different side structures were presented in two non-forming directions of the EMWM, which had the similar failure behaviours but different shear resistance deformations in the shear experiment. With the increase in relative density of EMWM, the capability of resisting shear deformation of the elastic–porous sandwich structure improved. However, the effect of increase in the core/face-sheet thickness ratio on the shear resistance deformation of elastic–porous sandwich structures showed opposite change compared with the increase of the core in relative density. The microstructures and morphologies revealed that the metallurgical bond of the brazing interface was formed, and vacuum brazing could greatly improve the interfacial bonding strength between the core and face sheet. [Display omitted] • The elastic–porous sandwich structure with entangled metallic wire mesh is proposed. • Shear failure behaviours of the elastic–porous sandwich structure are investigated. • The joint quality between the core and face is analysed by microstructure observation. • The effect of key sandwich structure parameters on the shear resistance performances is performed. [ABSTRACT FROM AUTHOR]

In order to realize small package size, uniform performance and high manufacture efficiency, a chip scale packaging (CSP) technology has been developed by controlling the thickness of the phosphor film in this paper. Five CSP LEDs with different thicknesses of 4 side faces are prepared. Optical tests and thermal simulations were carried out to evaluate the performance of the five samples. The measurement results indicate that: 1) When the absorption of the blue light reached a certain extent, the luminous flux and correlated color temperature gradually decreased with the increase of the thickness of the film; 2) the color temperature of the CSP LED will reach the best uniformity when the ratio of thickness of top film to that of side film is close to 2:1; 3) when the ratio of thickness of top film to that of side film is not less than 2:1, the effective light angle can reach about 160°; 4) the thermal management for prepared CSP samples shows a slight decrease in temperature as the side film's thickness increases; 5) the aging test result shows that the thinner the package thickness is, the stronger the aging resistance will be. • A new chip scale package process has opened up our understanding of chip scale package, with this special process, we can arbitrarily change the package thickness of any light-emitting surfaces of the chip, therefore, the specific light-emitting demand can be achieved by controlling the ratio of the top surface package thickness to the side package thickness. • Experimental results show that this method of packaging with fluorescent film pressing and cutting can get a different light distribution curve, namely, saddle shaped light distribution, which means that this kind of CSP LEDs has a wider light angle than the traditional packaging. • Especially when the upper surface film thickness and the side film thickness ratio are not less than the 2:1, the effective luminous angle can reach about 160°, The results also show that when the ratio of the upper surface package thickness and side package thickness reaches 2:1, the correlated color temperature change at a different angle of the CSP LED can be the minimum, close to 7%, What's more, when the concentration of the phosphor in the encapsulated film is the same, the decrease of the thickness of the film can not only lead to the increase of temperature but also the increase of anti-aging ability. • In summary, we conclude that when the surface thickness and the thickness of the package side reaches 2:1, the CSP LED can achieve a wide light-emitting angle, the most uniform correlated color temperature distribution, relatively uniform temperature distribution, and an acceptable anti aging capacity. [ABSTRACT FROM AUTHOR]

Abstract: 3D silicon radiation detectors offer many advantages over planar detectors, including improved radiation tolerance and faster charge collection time. We proposed a new 3D architecture (referred to as 3D-stc), which features columnar electrodes of one doping type only, thus, allowing a considerable simplification of the manufacturing process. In this paper, we report selected results from the electrical characterization of 3D diodes fabricated with this technology, along with preliminary results on the charge collection efficiency of these devices. [Copyright &y& Elsevier]

Abstract: We report on the results from the production of 600 double-sided silicon microstrip detectors for the ALICE experiment. We present the fabrication process and some selected results from the electrical characterization of detectors and test structures. The large amount of experimental data allowed a statistically relevant analysis to be performed. The main technological aspects related to production yield optimization will also be addressed. [Copyright &y& Elsevier]

In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization. [Copyright &y& Elsevier]

We report on selected results from the production of 400 double-sided silicon microstrip detectors for the AMS-02 experiment. The main process issues are discussed with emphasis on their impact on detector performance and fabrication yield. [Copyright &y& Elsevier]

This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades. [ABSTRACT FROM AUTHOR]

Abstract: We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are discussed here. [Copyright &y& Elsevier]

Abstract: A novel 1-3-2 type piezoelectric composite is developed. There are piezoelectric ceramic framework supports at transverse and longitudinal directions in its structure, so it is free from the influence of any outside mechanic impact and environmental temperature change. The sample characteristic is good coherence. It has many advantages, such as a high piezoelectricity, lower density and acoustic impedance matching with water and tissue easily. Based on Newnham’s series and parallel theory of composites, the calculation formulae of dielectric and piezoelectric constants of a 1-3-2 type piezoelectric composite are deduced. The sample’s characteristics indicate that a 1-3-2 type piezoelectric composite’s theoretic calculation values are in good agreement with the measurement results. Element samples have been designed, manufactured and measured. The results indicate that the resonant frequency, resonant impedance, piezoelectricity and static capacity of these samples are stable. It is easy to design sensor array elements using this material. [Copyright &y& Elsevier]