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24 results on '"Chattopadhyay, Sanatan"'

14. CBM Collaboration

Author

Ablyazimov, T., Abuhoza, A., Adak, R., Adamczewski-Musch, J., Adamczyk, M., Aggarwal, M.M., Ahammed, Z., Ahmad, F., Ahmad, N., Ahmad, S., Akindinov, A., Akishin, P., Akishina, E., Akishina, T., Akishina, V., Al-Turany, M., Alexandrov, E., Alexandrov, I., Amar-Youcef, S., Anđelić, M., Andreeva, O., Andrei, C., Andronic, A., Anisimov, Yu., Appelshäuser, H., Arend, A., Argintaru, D., Atkin, E., Avdeev, S., Averbeck, R., Azmi, M.D., Baban, V., Bach, M., Badura, E., Baginyan, S., Balle, T., Balog, T., Bandyopadhyay, S., Banerjee, P., Baranova, N., Barczyk, T., Bartoş, D., Bashir, S., Basrak, Z., Baszczyk, M., Batenkov, O., Baublis, V., Baumann, C., Baznat, M., Becker, K.-H., Bel, T., Belogurov, S., Bendarouach, J., Berceanu, I., Bercuci, A., Berdermann, E., Berdnikov, A., Berdnikov, Y., Berendes, R., Bergmann, C., Bertini, D., Bertini, O., Beşliu, C., Bezshyyko, O., Bhaduri, P.P., Bhasin, A., Bhati, A.K., Bhattacharjee, B., Bhattacharyya, A., Bhattacharyya, T.K., Biswas, S., Blau, D., Blume, C., Bocharov, Yu., Böttger, S., Borysova, M., Breitner, T., Brüning, U., Brzychczyk, J., Bubak, A., Büsching, H., Bychkov, A., Byszuk, A., Cai, Xu, Cãlin, M., Cao, Ping, Čaplar, R., Caragheorgheopol, G., Carević, I., Cătănescu, V., Chakrabarti, A., Chatterji, S., Chattopadhyay, Sanatan, Chattopadhyay, Subhasis, Chen, Hongfang, Cheng, Jianping, Chepurnov, V., Chernenko, S., Chernogorov, A., Choi, Kyung-Eon, Ciobanu, M.I., Claus, G., Constantin, F., Covlea, V., Csanád, M., D'Ascenzo, N., Das, S., Davkov, K., Davkov, V., de Cuveland, J., Debnath, B., Dementiev, D., Deng, Zhi, Deppe, H., Deppner, I., Derenovskaya, O., Deveaux, C.A., Deveaux, M., Dey, K., Dey, M., Dillenseger, P., Dobyrn, V., Doering, D., Dorokhov, A., Drozd, A., Dubey, A.K., Dubnichka, S., Dubnichkova, A., Dürr, M., Dulinski, W., Dutka, L., Dželalija, M., Emschermann, D., Engel, H., Eremin, V., Eşanu, T., Eschke, J., Eschweiler, D., Eum, Jongsik, Fan, Huanhuan, Fateev, O., Filozova, I., Finogeev, D., Fischer, P., Flemming, H., Frankenfeld, U., Friese, V., Friske, E., Fröhlich, I., Frühauf, J., Fülöp, Á., Gajda, J., Galatyuk, T., Galkin, A., Galkin, V., Gangopadhyay, G., García Chávez, C., Gašparić, I., Gebelein, J., Ghosh, P., Ghosh, S.K., Goffe, M., Golinka-Bezshyyko, L., Golovatyuk, V., Golovnya, S., Golovtsov, V., Golubeva, M., Golubkov, D., Gómez Ramírez, A., Gorbunov, S., Gorokhov, S., Gottschalk, D., Gryboś, P., Grzeszczuk, A., Guber, F., Gudima, K., Gupta, A., Gusakov, Yu., Haldar, A., Haldar, S., Hartmann, H., Hehner, J., Heidel, K., Heine, N., Hellbär, E., Herghelegiu, A., Herrmann, N., Heß, B., Heuser, J.M., Himmi, A., Höhne, C., Holzmann, R., Huang, Guangming, Huang, Xinjie, Hutsch, J., Hutter, D., Iakovleva, E., Ierusalimov, A., Ilgenfritz, E.-M., Irfan, M., Ivanov, M., Ivanov, Valery, Ivanov, Victor, Ivanov, Vladimir, Ivashkin, A., Jaaskelainen, K., Jahan, H., Jain, V., Jakovlev, V., Janson, T., Jipa, A., Kadenko, I., Kämpfer, B., Kalcher, S., Kalinin, V., Kampert, K.-H., Kang, Tae Im, Kaptur, E., Karabowicz, R., Karavichev, O., Karavicheva, T., Karmanov, D., Karnaukhov, V., Karpechev, E., Kasiński, K., Kasprowicz, G., Kaur, M., Kazantsev, A., Kebschull, U., Kekelidze, G., Khan, M.M., Khan, S.A., Khanzadeev, A., Khasanov, F., Khvorostukhin, A., Kirakosyan, V., Kirejczyk, M., Kiryakov, A., Kiš, M., Kisel, I., Kisel, P., Kiselev, S., Kiss, A., Kiss, T., Klaus, P., Kłeczek, R., Klein-Bösing, Ch., Kleipa, V., Kmon, P., Koch, K., Kochenda, L., Koczoń, P., König, W., Kohn, M., Kolb, B.W., Kolosova, A., Komkov, B., Kopfer, J.M., Korolev, M., Korolko, I., Kotte, R., Kotynia, A., Kovalchuk, A., Kowalski, S., Koziel, M., Kozlov, G., Kravtsov, P., Krebs, E., Kreidl, C., Kresan, D., Kretschmar, G., Kretz, M., Krieger, M., Kryshen, E., Kucewicz, W., Kudin, L., Kugler, A., Kulakov, I., Kunkel, J., Kurepin, A., Kurilkin, P., Kushpil, V., Kyva, V., Ladygin, V., Lara, C., Larionov, P., Laso Garcia, A., Lavrik, E., Lazanu, I., Lebedev, A., Lebedev, S., Lebedeva, E., Lehnert, J., Lehrbach, J., Lemke, F., Li, Cheng, Li, Jin, Li, Qiyan, Li, Yuanjing, Li, Yulan, Lindenstruth, V., Linev, S., Linnik, B., Litvinenko, E., Liu, Feng, Lobanov, I., Lobanova, E., Löchner, S., Loizeau, P.-A., Lucio Martínez, J.A., Lymanets, A., Maevskaya, A., Mahajan, S., Mahapatra, D.P., Mahmoud, T., Maj, P., Majka, Z., Malakhov, A., Malankin, E., Malkevich, D., Malyatina, O., Malygina, H., Mandal, S., Manko, V., Manz, S., Marin, V., Marin Garcia, A.M., Markert, J., Masciocchi, S., Matulewicz, T., Merkin, M., Mialkovski, V., Michel, J., Miftakhov, N., Mikhailov, K., Mikhaylov, V., Milanović, B., Militsija, V., Mir, M.F., Miskowiec, D., Morhardt, T., Müller, W.F.J., Müntz, C., Murin, Yu., Najman, R., Naumann, L., Nayak, T., Nedosekin, A., Neumann, B., Niebur, W., Nikulin, V., Normanov, D., Nüssle, M., Oancea, A., Oh, Kunsu, Onishchuk, Y., Osipov, D., Ososkov, G., Ossetski, D., Otfinowski, P., Ovcharenko, E., Pal, S., Panasenko, I., Panda, N.R., Parzhitskiy, S., Pauly, C., Peng, Haiping, Peric, I., Peshekhonov, D., Peshekhonov, V., Petráček, V., Petriş, M., Petrovici, A., Petrovici, M., Petrovskiy, A., Petukhov, O., Piasecki, K., Pieper, J., Pietraszko, J., Płaneta, R., Plekhanov, E., Plotnikov, V., Plujko, V., Pluta, J., Poliakov, V., Polozov, P., Pop, A., Popov, V., Pospisil, V., Potukuchi, B.V.K.S., Pouryamout, J., Poźniak, K., Prakash, A., Prokudin, M., Pshenichnov, I., Pugach, M., Pugatch, V., Querchfeld, S., Radulescu, L., Raha, S., Raja, W., Rami, F., Raniwala, R., Raniwala, S., Raportirenko, A., Rautenberg, J., Rauza, J., Ray, R., Razin, S., Reichelt, P., Reinecke, S., Reshetin, A., Ristea, C., Ristea, O., Roether, F., Romaniuk, R., Rost, A., Rostchin, E., Rostovtseva, I., Roy, A., Rożynek, J., Ryabov, Yu., Rykalin, V., Sadovsky, A., Sadovsky, S., Sahoo, R., Sahu, P.K., Saini, J., Samanta, S., Sambyal, S.S., Samsonov, V., Sánchez Rosado, J., Sau, S., Saveliev, V., Schatral, S., Schiaua, C., Schmidt, C.J., Schmidt, H.R., Schmidt, K., Schweda, K., Scurtu, A., Seck, F., Seddiki, S., Selyuzhenkov, I., Semennikov, A., Senger, A., Senger, P., Shabunov, A., Shao, Ming, Sharma, M.K., Shumeiko, N., Shumikhin, V., Sikora, B., Simakov, A., Simon, C., Simons, C., Singaraju, R.N., Singh, A.K., Singh, B.K., Singh, C.P., Singhal, V., Siwek-Wilczyńska, K., Škoda, L., Skwira-Chalot, I., Som, I., Song, Jihye, Sorokin, I., Sosin, Z., Soyk, D., Staszel, P., Stavinskiy, A., Stephan, E., Storozhyk, D., Strikhanov, M., Strohauer, S., Stroth, J., Sturm, C., Sultanov, R., Sun, Yongjie, Svoboda, O., Szczygieł, R., Talukdar, R., Tang, Zebo, Tanha, M., Tarasiuk, J., Tarassenkova, O., Târzilă, M.-G., Tiflov, V., Tischler, T., Tlustý, P., Toia, A., Tolyhi, T., Topil'skaya, N., Trageser, C., Trivedy, P., Tsakov, I., Tsyupa, Yu., Turowiecki, A., Uhlig, F., Usenko, E., Valin, I., Vasiliev, T., Vassiliev, I., Verbitskaya, E., Verhoeven, W., Veshikov, A., Visinka, R., Viyogi, Y.P., Volkov, S., Volkov, Yu., Vorobiev, A., Voronin, A., Vovchenko, V., Vznuzdaev, E., Vznuzdaev, M., Wang, Dong, Wang, Yaping, Yi, Wang, Wendisch, C., Wessels, J.P., Wiebusch, M., Wiechula, J., Wiedemann, B., Wielanek, D., Wieloch, A., Winckler, N., Winter, M., Wiśniewski, K., Wohlfeld, D., Wolf, Gy., Sanguk, Won, Wüstenfeld, J., Xiang, Changzhou, Nu, Xu, Yi, Jun-Gyu, Yin, Zhongbao, Yoo, In-Kwon, Yue, Qian, Yuldashev, B., Yushmanov, I., Zabołotny, W., Zaitsev, Yu., Zanevsky, Yu., Zhalov, M., Zhang, Ya Peng, Zhang, Yifei, Zhou, Daicui, Zhu, Xianglei, Zinchenko, A., Zipper, W., Żoładź, M., Zrelov, P., Zryuev, V., Zumbruch, P., and Zyzak, M.

Published
2014
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15. The CBM Collaboration

Author

Abuhoza, A., Adamczewski-Musch, J., Aggarwal, M.M., Ahammed, Z., Ahmad, F., Ahmad, N., Ahmad, S., Akindinov, A., Akishin, P., Akishina, E., Akishina, T., Akishina, V., Al-Turany, M., Amar-Youcef, S., Anđelić, M., Andrei, C., Andronic, A., Anisimov, Yu., Appelshäuser, H., Arend, A., Argintaru, D., Armbruster, T., Atkin, E., Avdeyev, S., Azmi, M.D., Baban, V., Bach, M., Badura, E., Baginyan, S., Balog, T., Bandyopadhyay, S., Banerjee, P., Baranova, N., Bartoş, D., Bashir, S., Basrak, Z., Baszczyk, M., Batenkov, O., Baublis, V., Baumann, C., Becker, K.-H., Bel, T., Belogurov, S., Berceanu, I., Berdermann, E., Berdnikov, A., Berdnikov, Y., Berendes, R., Bergmann, C., Bertini, D., Beşliu, C., Bezshyyko, O., Bhaduri, P.P., Bhasin, A., Bhati, A.K., Bhattacharjee, B., Bhattacharyya, A., Bhattacharyya, T.K., Biswas, S., Blau, D., Blume, C., Bocharov, Yu., Böttger, S., Borysova, M., Bozsogi, B., Breitner, T., Brüning, U., Brzychczyk, J., Bubak, A., Bychkov, A., Cai, Xu, Cãlin, M., Čaplar, R., Caragheorgheopol, G., Carević, I., Cătănescu, V., Chakrabarti, A., Chatterji, S., Chattopadhyay, Sanatan, Chattopadhyay, Subhasis, Chen, Hongfang, Cheng, Jianping, Chepurnov, V., Chernenko, S., Chernogorov, A., Ciobanu, M.I., Claus, G., Constantin, F., Covlea, V., Csanád, M., DʼAscenzo, N., Das, S., Davkov, K., Davkov, V., de Cuveland, J., Debnath, B., Deng, Zhi, Deppe, H., Deppner, I., Derenovskaya, O., Deveaux, M., Dey, K., Dey, M., Dillenseger, P., Dobyrn, V., Doering, D., Domachowski, M., Dorokhov, A., Dritsa, C.A., Dubey, A.K., Dubnichka, S., Dubnichkova, A., Dulinski, W., Dželalija, M., Emschermann, D., Engel, H., Eremin, V., Eşanu, T., Eschke, J., Fateev, O., Fischer, P., Flemming, H., Frankenfeld, U., Friese, V., Fröhlich, I., Frühauf, J., Fülöp, Á., Gajda, J., Galatyuk, T., Galkin, A., Galkin, V., Gangopadhyay, G., Ganti, M.S., García Chávez, C., Gašparić, I., Gebelein, J., Ghosh, P., Ghosh, S.K., Goffe, M., Golovatyuk, V., Golovnya, S., Golovtsov, V., Golubeva, M., Golubkov, D., Gorbunov, S., Gottschalk, D., Gryboś, P., Grzeszczuk, A., Guber, F., Gupta, A., Gusakov, Yu., Haldar, A., Haldar, S., Hartig, M., Hehner, J., Heidel, K., Heine, N., Herghelegiu, A., Herrmann, N., Heß, B., Heuser, J.M., Himmi, A., Höhne, C., Holzmann, R., Huang, Guangming, Hutsch, J., Hutter, D., Ierusalimov, A., Ilgenfritz, E.-M., Irfan, M., Ivanov, Valery, Ivanov, Victor, Ivanov, Vladimir, Ivashkin, A., Jaaskelainen, K., Jakovlev, V., Janson, T., Jipa, A., Kadenko, I., Kämpfer, B., Kalcher, S., Kalinin, V., Kampert, K.-H., Kang, Tae Im, Kaptur, E., Karabowicz, R., Karavichev, O., Karavicheva, T., Karmanov, D., Karnaukhov, V., Karpechev, E., Kasiński, K., Kaur, M., Kazantsev, A., Kebschull, U., Kekelidze, G., Khan, M.M., Khan, S.A., Khanzadeev, A., Khasanov, F., Kirakosyan, V., Kirejczyk, M., Kiš, M., Kisel, I., Kisel, P., Kiselev, S., Kiss, A., Kiss, T., Kłeczek, R., Klein-Bösing, Ch., Kleipa, V., Koch, K., Kochenda, L., Koczoń, P., Kolb, B., Komkov, B., Kopfer, J.M., Korolev, M., Korolko, I., Kotte, R., Kotynia, A., Kovalchuk, A., Kowalski, S., Koziel, M., Kozlov, G., Kravtsov, P., Kreidl, C., Kresan, D., Kretz, M., Krieger, M., Kryshen, E., Kucewicz, W., Kudin, L., Kugler, A., Kulakov, I., Kunkel, J., Kurepin, A., Kyva, V., Ladygin, V., Lara, C., Larionov, P., Laso Garcia, A., Lavrik, E., Lazanu, I., Lebedev, A., Lebedev, S., Lebedeva, E., Lehrbach, J., Lemke, F., Li, Cheng, Li, Jin, Qyian, Li, Li, Yuanjing, Li, Yulan, Lindenstruth, V., Linev, S., Litvinenko, E., Liu, Feng, Lobanov, I., Lobanova, E., Löchner, S., Loizeau, P.-A., Lymanets, A., Maevskaya, A., Mahajan, S., Mahapatra, D.P., Mahmoud, T., Maj, P., Majka, Z., Malakhov, A., Malyatina, O., Malygina, H., Manjavidze, J., Manko, V., Manz, S., Marin, V., Matulewicz, T., Merkin, M., Mialkovski, V., Miftakhov, N., Mikhailov, K., Milanovic, B., Militsija, V., Mir, F., Müller, W.F.J., Müntz, C., Murin, Yu., Naumann, L., Nayak, T., Neumann, B., Niebur, W., Nikulin, V., Nüssle, M., Oancea, A., Kunsu, Oh, Onishchuk, Y., Ososkov, G., Ossetski, D., Otfinowski, P., Ovcharenko, E., Susanta, Pal, Panasenko, I., Parzhitskiy, S., Pauly, C., Peng, Haiping, Peric, I., Peshekhonov, D., Peshekhonov, V., Petráček, V., Petriş, M., Petrovici, A., Petrovici, M., Petrovskiy, A., Petukhov, O., Piasecki, K., Pietraszko, J., Plekhanov, E., Plujko, V., Poliakov, V., Polozov, P., Pop, A., Popov, V., Pospisil, V., Potukuchi, B.V.K.S., Pouryamout, J., Prakash, A., Prokudin, M., Pshenichnov, I., Pugatch, V., Querchfeld, S., Raha, S., Raja, W., Rami, F., Raniwala, R., Raniwala, S., Raportirenko, A., Rautenberg, J., Ray, R., Razin, S., Reichelt, P., Reinecke, S., Reshetin, A., Ristea, C., Ristea, O., Rostchin, E., Rostovtseva, I., Roy, A., Rożynek, J., Ryabov, Yu., Rykalin, V., Sadovsky, A., Sadovsky, S., Sahu, P.K., Saini, J., Sambyal, S.S., Samsonov, V., Sanchez Rosado, J., Saveliev, V., Schatral, S., Schiaua, C., Schmidt, C.J., Schmidt, H.R., Schrader, C., Schweda, K., Scurtu, A., Seddiki, S., Semennikov, A., Senger, A., Senger, P., Shabunov, A., Shao, Ming, Sharma, M.K., Shumikhin, V., Sikora, B., Simakov, A., Simon, C., Simons, C., Singaraju, R.N., Singh, A.K., Singh, B.K., Singh, C.P., Singhal, V., Singla, M., Siwek-Wilczynska, K., Škoda, L., Jihye, Song, Sorokin, I., Soyk, D., Staszel, P., Stavinskiy, A., Stephan, E., Storozhyk, D., Strikhanov, M., Stroth, J., Sturm, C., Sun, Yongjie, Svoboda, O., Szczygieł, R., Talukdar, R., Tang, Zebo, Tarassenkova, O., Târzilă, M., Tiflov, V., Tischler, T., Tlustý, P., Tolyhi, T., Topilʼskaya, N., Trageser, C., Trivedy, P., Tsakov, I., Tsyupa, Yu., Uhlig, F., Usenko, E., Valin, I., Vasiliev, T., Vassiliev, I., Verbitskaya, E., Verhoeven, W., Veshikov, A., Viyogi, Y., Volkov, S., Volkov, Yu., Vorobiev, A., Voronin, A., Vznuzdaev, E., Vznuzdaev, M., Wang, Dong, Wang, Yaping, Wang, Yi, Wendisch, C., Wessels, J.P., Wiechula, J., Wiedemann, B., Winter, M., Wisniewski, K., Wohlfeld, D., Wolf, Gy., Wüstenfeld, J., Xiang, Changzhou, Nu, Xu, Yi, Jun-Gyu, Zhongbao, Yin, Yoo, In-Kwon, Yue, Qian, Yushmanov, I., Zaitsev, Yu., Zanevsky, Yu., Zhalov, M., Zhang, Ya Peng, Zhang, Yifei, Daicui, Zhou, Zhu, Xianglei, Zinchenko, A., Zipper, W., Żoładź, M., Zrelov, P., Zryuev, V., Zumbruch, P., and Zyzak, M.

Published
2013
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16. The CBM Collaboration

Author

Abel, N., Adamczewski, J., Adamova, D., Aggarwal, M.M., Ahmad, N., Ahmad, Z., Akindinov, A., Akishin, P., Akishina, E., Akishina, T., Al-Turany, M., Alyushin, M., Amar-Youcef, S., Ammosov, V., Anđelić, M., Andrei, C., Andronic, A., Anisimov, Yu., Antipin, K., Appelshäuser, H., Arefiev, A., Armbruster, T., Artamonov, A., Atkin, E., Azmi, M.D., Baba, P.V.K.S., Badura, E., Baginyan, S., Bandyopadhyay, S., Baranova, N., Bashindzhagyan, G., Basrak, Z., Baublis, V., Belogurov, S., Berceanu, I., Berdermann, E., Berdnikov, A., Berdnikov, Y., Berendes, R., Bergmann, C., Bertini, D., Besliu, C., Bezshyyko, O., Bhaduri, P., Bhasin, A., Bhati, A.K., Bhattacharjee, B., Bhattacharya, A., Bocharov, Y., Bogolyubsky, M., Boldizsar, L., Bondar, N., Borysova, M., Böttger, S., Braun-Munzinger, P., Brüning, U., Brzychczyk, J., Bubak, A., Čaplar, R., Cai, Xu, Calin, M., Caragheorgheopol, G., Carević, I., Cătănescu, V., Chakraborti, A., Chatterji, S., Chattopadhyay, Subhasis, Chattopadhyay, Sukalyan, Chattopadhyay, Sanatan, Chaus, A., Chen, Hongfang, Cheng, Jianping, Chepurnov, V., Chernenko, S., Chernogorov, A., Chubarov, M., Ciobanu, M., Claus, G., Covlea, V., Cozma, D., Csanád, M., D'Ascenzo, N., Das, D., Das, I., Davkov, V., Davkov, K., De, M., De, R., Debnath, B., Denes, E., Deng, Zhi, Denisova, O., Deppe, H., Deppner, I., Dermenev, A., Deveaux, M., Dey, M., Dorokhov, A., Dritsa, C., Dubey, A., Dulinski, W., Dutt-Mazumdar, A.K., Dutta, T., Dutta, D., DuttaMajumdar, M.R., Dyatchenko, V., Dželalija, M., Engel, H., Esanu, T., Eschke, J., Essel, H., Fateev, O., Ferreira Marques, R., Fischer, P., Flemming, H., Fodor, Z., Fonte, P., Fröhlich, I., Fröning, H., Friese, V., Futo, E., Gašparić, I., Gajda, J., Galatyuk, T., Galkin, V., Galkin, A., Gangopadhyay, G., Gao, Wenxue, Garabatos, C., Gasik, P., Gebelein, J., Ghosh, P., Gilitsky, Yu., Golovatyuk, V., Golovnya, S., Golovtsov, V., Golubeva, M., Golubkov, D., Golutvin, A., González-Díaz, D., Gorbunov, S., Gorokhov, S., Gottschalk, D., Gousakov, Ju., Grosse, E., Gryboś, P., Grzeszczuk, A., Guber, F., Gumenuik, A., Gupta, A., Hartig, M., Heidel, K., Heine, N., Herghelegiu, A., Herrmann, N., Heuser, J., Himmi, A., Höhne, C., Holzmann, R., Hong, Byungsik, Hutsch, J., Ierusalimov, A., Igolkin, S., Ilyushenko, I., Im Kang, Tae, Irfan, M., Ivanov, Valery, Ivanov, V., Ivanov, Victor, Ivashkin, A., Jaaskelainen, K., Jakovlev, V., Jinaru, A., Jipa, A., Kachel, M., Kadenko, I., Kalita, H., Kämpfer, B., Karasev, V., Karavichev, O., Karavicheva, T., Karmanov, D., Karpechev, E., Kashif, E.M., Kasinski, K., Kaur, Manjit, Kazantsev, A., Kebschull, U., Kecskemeti, J., Kekelidze, G., Khan, M.M., Khan, S.A., Khanzadeev, A., Kharlov, Yu., Khasanov, F., Kiš, M., Kim, Junghan, Kirejczyk, M., Kisel, I., Kiselev, S., Kiseleva, A., Kiss, T., Kiss, A., Klein-Bøsing, Ch., Klein-Bøsing, M., Kleipa, V., Kluev, A., Koch, K., Koczoń, P., Kolb, B., Komkov, B., Konstantinov, D., Korobchuk, P., Korolev, M., Korolko, I., Korotkova, N., Kotte, R., Kotynia, A., Kovalchuk, A., Kowalski, S., Koziel, M., Krauze, M., Kreidel, C., Kresan, D., Kryshen, E., Kudin, L., Kudryashov, I., Kugel, A., Kugler, A., Kurepin, A., Løchner, S., Ladygin, V., Lara, C., Lashaev, S., Laszlo, A., Lazanu, I., Lebedev, A., Lebedev, S., Lee, Hayoung, Lemke, F., Li, Cheng, Li, Yuanjing, Li, Yulan, Li, Jin, Lindenstruth, V., Linev, S., Litvinenko, E., Lobanov, I., Lobanova, E., Loizeau, P., Lucenko, V., Lymanets, A., Maevskaya, A., Mahapatra, D.P., Maiatski, V., Maj, P., Majka, Z., Malakhov, A., Malyatina, O., Mangiarotti, A., Manjavidze, J., Manko, V., Männer, R., Manz, S., Matulewicz, T., Matyushevskiy, E., Melnik, A., Merkin, M., Mialkovski, V., Mikhailov, K., Militsija, V., Mir, M.F., Mohanty, B., Müller, W.F.J., Müller-Klieser, S., Müntz, C., Murin, Y., Murthy, G.S.N., Nadtochii, A., Naumann, L., Nayak, T., Niebur, W., Nikulin, V., Nüssle, M., Onishchuk, Y., Ososkov, G., Ossetski, D., Pal, L., Pal, S., Panasenko, Ya., Peric, I., Peshekhonov, D., Peshekhonov, V., Peshenichnov, I., Petráček, V., Petriş, M., Petrovici, M., Petrovici, A., Petrovskiy, A., Piasecki, K., Plekhanov, E., Plujko, V., Poliakov, A., Polozov, P., Pop, A., Popov, V., Pospisil, V., Pozdniakov, V., Prakash, A., Prokudin, M., Pugatch, V., Røhrich, D., Rami, F., Raniwala, R., Raniwala, S., Raportirenko, A., Rasin, V., Reshetin, A., Riabov, Y., Rogachevsky, O., Rostchin, E., Rostovtseva, I., Roy, A., Roy, P., Rożynek, J., Ryazantsev, A., Rykalin, V., Ryzhinskiy, M., Sadovsky, A., Sadovsky, S., Sahu, P.K., Saini, Y., Sambyal, S.S., Samsonov, V., Sang Ryu, Min, Saveliev, V., Schiaua, C., Schmidt, C.J., Schrader, C., Schweda, K., Scurtu, A., Seddiki, S., Seliverstov, D., Semak, A., Semennikov, A., Senger, P., Shao, Ming, Sharkov, G., Shevchenko, V., Sikora, B., Silaev, A., Sim, Kwang-Souk, Simakov, A., Singaraju, R.N., Singh, V., Singh, C.P., Singh, B.K., Singh, A.K., Singhal, V., Sinha, T., Siwek-Wilczynska, K., Skoda, L., Soldatov, A., Solin, L., Soltveit, H.K., Soos, Cs., Sorokin, Y., Staszel, P., Stavinskiy, A., Steinle, C., Stephan, E., Stolpovsky, P., Storozhyk, D., Ströbele, H., Strikhanov, M., Stroth, J., Sun, Yongjie, Sviridov, Y., Szczygieł, R., Tang, Zebo, Tarassenkova, O., Tiflov, V., Tlusty, P., Tolyhi, T., Topil'skaya, N., Torheim, O., Trivedy, P., Tsyupa, Yu., Uhlig, F., Ukhanov, M., Ullaland, K., Vakil, G.B., Valin, I., Vassiliev, I., Velica, S., Vesztergombi, G., Victorov, V., Viyogi, Y.P., Volkov, Y., Volkov, S., Vorobiev, A., Voronin, A., Vznuzdaev, E., Wang, Yaping, Wang, Xiaolian, Wang, Yi, Wendisch, C., Wessels, J., Wilk, A., Winter, M., Wisniewski, K., Wurz, A., Wüstenfeld, J., Xu, Chuncheng, Yi, Jun-Gyu, Yin, Zhongbao, Yoo, In-Kwon, Yue, Qian, Yushmanov, I., Zaets, V., Zaitsev, Y., Zanevsky, Yu., Zelnicek, P., Zhalov, M., Zhang, Ziping, Zhang, Yapeng, Zhou, Daicui, Zhu, Xianglei, Zinchenko, A., Zipper, W., Żoła̧dź, M., Zrelov, P., and Zrjuev, V.

Published
2009
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17. Investigation of the comparative photovoltaic performance of n-ZnO nanowire/p-Si and n-ZnO nanowire/p-CuO heterojunctions grown by chemical bath deposition method.

Author

Paul, Somdatta, Sultana, Jenifar, Bhattacharyya, Anirban, Karmakar, Anupam, and Chattopadhyay, Sanatan

Subjects
*ZINC oxide, *CHEMICAL solution deposition, *SILICON nanowires, *PHOTOVOLTAIC power generation, *COPPER oxide films, *HETEROJUNCTIONS
Abstract

In this work, the authors report a comparative study on the physical and electrical properties of n-ZnO nanowires (NWs)/p-Si and n-ZnO NWs/p-CuO film heterojunctions by employing chemical bath deposition method. Solar energy conversion efficiency of the n-ZnO NWs/p-CuO and n-ZnO NWs/p-Si heterojunctions is obtained to be 3.92% and 0.008%, respectively, under 100 mW/cm 2 input incident power. Thus, the n-ZnO NWs/p-CuO heterojunctions exhibit superior photovoltaic performance in comparison to the n-ZnO NWs/p-Si system. [ABSTRACT FROM AUTHOR]

Published
2018
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18. Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications.

Author

Sultana, Jenifar, Das, Anindita, Das, Avishek, Saha, Nayan Ranjan, Karmakar, Anupam, and Chattopadhyay, Sanatan

Subjects
*PHOTOVOLTAIC cells, *POWDER metallurgy, *CRYSTAL growth, *THIN films, *COPPER oxide, *SILICON, *HETEROJUNCTIONS, *VAPOR-liquid equilibrium
Abstract

In this work, the CuO nano-powder has been synthesized by employing chemical bath deposition technique for its subsequent use to grow ultrathin film (20 nm) of p-CuO on n-Si substrate for the fabrication of p-CuO/n-Si hetero-junction diodes. The thin CuO film has been grown by employing vapour-liquid-solid method. The crystalline structure and chemical phase of the film are characterized by employing field-emission scanning electron microscopy and X-ray diffraction studies. Chemical stoichiometry of the film has been confirmed by using energy dispersive X-ray spectroscopy. The potential for photovoltaic applications of such films is investigated by measuring the junction current-voltage characteristics and by extracting the relevant parameters such as open circuit photo-generated voltage, short circuit current density, fill-factor and energy conversion efficiency. [ABSTRACT FROM AUTHOR]

Published
2016
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19. Yttrium (Y) doped ZnO nanowire/p-Si heterojunction devices for efficient self-powered UV-sensing applications.

Author

Saha, Rajib, Dalapati, Goutam Kumar, Chakrabarti, Subhananda, Karmakar, Anupam, and Chattopadhyay, Sanatan

Abstract

In the current work, n-type Y-doped ZnO nanowires (n-Y:ZnO) and p-type Si heterojunctions are fabricated by employing two-step chemical bath deposition (CBD) process. The work demonstrates the systematic incorporation of Y in ZnO nanowires for achieving the low power UV response. The crystalline nature, morphology, chemical compositions of doped nanowires are studied extensively by employing XRD, FESEM, HRTEM, elemental mapping, EDS and XPS. The change in defect states due to Y incorporation has been studied in detail by using deconvoluated PL spectra. The results indicate that ZnO nanowires exhibit Zn interstitials dependent huge UV/blue luminescence and oxygen vacancy related lowest green luminescence simultaneously for selective 1% Y-doping. The best self-powered photoresponse has been achieved for 1% Y-doped ZnO nanowires/p-Si heterojunction under relatively low power UV illumination (374 nm @5 mW/cm2). More significantly, at self-powered mode, such heterojunction has been delivered a stable and fast (<1 s) photoresponse with a maximum responsivity of 225 mA/W and high On/Off ratio of ∼104. The work provides an insight into the fabrication of heterojunction UV detectors for next-generation self-powered, large area optoelectronic devices. • Growth of Y:ZnO nanowires on Si substrate by using in-situ rare earth (Y) doping in CBD method. • Physical, chemical, optical and electrical characterizations of such heterojunctions for optoelectronic applications. • Simultaneous generation of Zn interstitials and reduction of O vacancies play a crucial role for reducing the dark current. • Y:ZnO nanowires/Si heterojunctions exhibit relatively higher responsivity and superior response time in self-powered mode. [ABSTRACT FROM AUTHOR]

Published
2022
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20. Synthesis of HPMC stabilized nickel nanoparticles and investigation of their magnetic and catalytic properties.

Author

Maity, Dipanwita, Mollick, Md. Masud Rahaman, Mondal, Dibyendu, Bhowmick, Biplab, Neogi, Swarup Kumar, Banerjee, Aritra, Chattopadhyay, Sanatan, Bandyopadhyay, Sudipta, and Chattopadhyay, Dipankar

Subjects
*METHYLCELLULOSE, *NICKEL, *MAGNETIC properties of nanoparticles, *CATALYTIC activity, *STABILIZING agents, *FERROMAGNETIC materials
Abstract

Highlights: [•] Nickel nanoparticles (Ni Nps) synthesized using hydroxypropylmethylcellulose (HPMC). [•] HPMC stabilized Ni Nps form nanoflowers like structure with chain configuration. [•] The synthesized nickel nanoparticles are ferromagnetic. [•] Magnetic properties of HPMC stabilized Ni Nps are quite different from bared Ni Nps. [•] The resulting Ni Nps are active and recyclable catalyst for Suzuki coupling reactions. [ABSTRACT FROM AUTHOR]

Published
2013
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21. Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Author

Varzgar, John B., Kanoun, Mehdi, Uppal, Suresh, Chattopadhyay, Sanatan, Tsang, Yuk Lun, Escobedo-Cousins, Enrique, Olsen, Sarah H., O’Neill, Anthony, Hellström, Per-Erik, Edholm, Jonas, Östling, Mikael, Lyutovich, Klara, Oehme, Michael, and Kasper, Erich

Subjects
*SILICON, *OXIDES, *GERMANIUM, *MEASUREMENT
Abstract

Abstract: The reliability of gate oxides on bulk Si and strained Si (s-Si) has been evaluated using constant voltage stressing (CVS) to investigate their breakdown characteristics. The s-Si architectures exhibit a shorter life time compared to that of bulk Si, which is attributed to higher bulk oxide charges (Q ox) and increased surface roughness in the s-Si structures. The gate oxide in the s-Si structure exhibits a hard breakdown (HBD) at 1.9×104 s, whereas HBD is not observed in bulk Si up to a measurement period of 1.44×105 s. The shorter lifetime of the s-Si gate oxide is attributed to a larger injected charge (Q inj) compared to Q inj in bulk Si. Current–voltage (I–V) measurements for bulk Si samples at different stress intervals show an increase in stress induced leakage current (SILC) of two orders in the low voltage regime from zero stress time to up to 5×104 s. In contrast, superior performance enhancements in terms of drain current, maximum transconductance and effective channel mobility are observed in s-Si MOSFET devices compared to bulk Si. The results from this study indicate that further improvement in gate oxide reliability is needed to exploit the sustained performance enhancement of s-Si devices over bulk Si. [Copyright &y& Elsevier]

Published
2006
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22. Band splitting induced by momentum-quantization in semiconductor nanostructures: Observation of emission lines in Indium Phosphide (InP) nanotubes.

Author

Palit, Mainak, Nag Chowdhury, Basudev, Sikdar, Subhrajit, Sarkar, Krishnendu, Banerji, Pallab, and Chattopadhyay, Sanatan

Subjects
*NANOTUBES, *INDIUM phosphide, *METAL organic chemical vapor deposition, *CATHODOLUMINESCENCE, *ELECTRONIC band structure, *SEMICONDUCTOR devices, *SPECTRAL lines, *ELECTRON beam lithography
Abstract

• Experimental observation of emission lines originated from band-splitting phenomenon in InP nanotubes. • Growth of InP nanotubes by MOCVD on patterned template developed by e-beam lithography. • Developing a theoretical framework for investigating the band splitting effect in semiconductor nanotubes. Two spectral emission lines originated from band splitting in Indium Phosphide nanotubes are observed experimentally. The nanotubes are grown by Metal-Organic Chemical Vapour Deposition on patterned template developed by electron beam lithography. The splitting effect arising from spatial confinement-induced momentum quantization on the band structure of nanotubes is investigated by developing a theoretical model. The incorporation of momentum quantization in sp3s*-model with spin-orbit coupling indicates the splitting of Γ-point into two different symmetric points, which emit two spectral lines as confirmed by cathodoluminescence spectra. The observation provides novel insight into the band structure based transport behaviour of semiconductor quantum devices. [ABSTRACT FROM AUTHOR]

Published
2021
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23. Impact of seed layer annealing on the optoelectronic properties of double-step CBD grown n-ZnO nanowires/p-Si heterojunctions.

Author

Paul, Somdatta, Sultana, Jenifar, Saha, Nayan Ranjan, Dalapati, Goutam K., Karmakar, Anupam, and Chattopadhyay, Sanatan

Subjects
*HETEROJUNCTIONS, *CANNABIDIOL, *ZINC oxide synthesis, *CHEMICAL solution deposition, *SEEDS, *OXIDATION states
Abstract

In the current work, n-ZnO nanowires are grown by employing double-step chemical bath deposition (CBD) technique on p-Si substrate for the fabrication of n-ZnO nanowires/p-Si heterojunction diodes. The as-deposited ZnO seed layer is furnace annealed at 400 °C and 600 °C for 30 min in argon ambient for studying comparative changes of their optoelectronic properties. The systematic change of surface morphology, chemical compositions, crystallite structure, oxidation states, defect levels and photodetecting properties due to annealing of the seed layer has been investigated. Annealing the seed layer at 400 °C exhibits a nanosphere-like structure and provides superior nucleation sites for vertical growth of the nanowires in comparison to the as-deposited and 600 °C -annealed samples. The electrical, electro-optical and physical characterization results suggest the nanowires grown on 400 °C -annealed ZnO seeds to provide superior performance. [ABSTRACT FROM AUTHOR]

Published
2021
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24. Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

Author

Uppal, Suresh, Kanoun, Mehdi, Varzgar, John B., Chattopadhyay, Sanatan, Olsen, Sarah, and O’Neill, Anthony

Subjects
*SILICON, *GERMANIUM, *CAPACITORS, *DIELECTRIC devices
Abstract

Abstract: In this paper we study the impact of the variation of Ge content on the gate oxide reliability of strained-Si/SiGe (s-Si/SiGe) MOS devices. MOS capacitors and n-MOSFET devices were fabricated on Si, and strained Si grown on SiGe virtual substrates with a Ge content of 10 and 30%. The devices had poly-Si gates and were fabricated using thermal oxidation at 800°C giving average oxide thickness of 6.8nm. Constant voltage stressing (CVS) at 7V was used to study the breakdown characteristics of different samples. We observe a distinguishably different breakdown phenomenon for Si and s-Si/SiGe samples. Whereas the oxide on Si shows a typical breakdown behavior of a thick oxide, the oxide on s-Si/SiGe samples showed a quasi- or soft breakdown with an abrupt increase in gate leakage which increases after further stressing. The time to breakdown decreased with increase in the Ge content. These behaviors are attributed to poorer quality of the oxide on s-Si/SiGe caused by the high surface roughness, interface and oxide charges. It is pointed that quasi-breakdown may be a stronger reliability limiting factor for s-Si/SiGe devices in the oxide thickness range studied. [Copyright &y& Elsevier]

Published
2006
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