180 results on '"Amano, Hiroshi"'
Search Results
2. Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy
3. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing
4. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates
5. Improved performance of deep ultraviolet AlGaN-based light-emitting diode by reducing contact resistance of Al-based reflector
6. Stable electrical performance of AlGaInP-based red micro-light emitting diode by controlling interfacial morphologies of metal contacts
7. Electrical properties and structural defects of p-type GaN layers grown by halide vapor phase epitaxy
8. Surface passivation of light emitting diodes: From nano-size to conventional mesa-etched devices
9. Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures
10. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices
11. Scalable fabrication of GaN on amorphous substrates via MOCVD on highly oriented silicon seed layers
12. Optimization of InGaN thickness for high-quantum-efficiency Cs/O-activated InGaN photocathode
13. Combined effects of V pits and chip size on the electrical and optical properties of green InGaN-based light-emitting diodes
14. Ammonia decomposition and reaction by high-resolution mass spectrometry for group III – Nitride epitaxial growth
15. Nonpolar m-plane [formula omitted]N layers grown on m-plane sapphire by MOVPE
16. Effect of substrate misorientation on the concentration of impurities and surface morphology of an epitaxial GaN layer on N-polar GaN substrate by MOVPE
17. Effect of gas phase temperature on InGaN grown by metalorganic vapor phase epitaxy
18. Morphological study of InGaN on GaN substrate by supersaturation
19. How to obtain metal-polar untwinned high-quality (1 0 −1 3) GaN on m-plane sapphire
20. MOVPE growth and high-temperature annealing of (10[formula omitted]0) AlN layers on (10[formula omitted]0) sapphire
21. High-temperature thermal annealing of nonpolar (1 0 [formula omitted] 0) AlN layers sputtered on (1 0 [formula omitted] 0) sapphire
22. Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy
23. A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer
24. Effect of V/III ratio on the surface morphology and electrical properties of m–plane ([formula omitted]) GaN homoepitaxial layers
25. Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si(001) with a directionally sputtered AlN buffer layer
26. Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
27. MOVPE growth of nonpolar a-plane GaN with low oxygen contamination and specular surface on a freestanding GaN substrate
28. Development of AlN/diamond heterojunction field effect transistors
29. MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (1 1 1)Si substrates
30. Gasification of woody biomass char with CO 2: The catalytic effects of K and Ca species on char gasification reactivity
31. Dual tunnel medial patellofemoral ligament reconstruction for patients with patellar dislocation using a semitendinosus tendon autograft
32. Microstructure of AlN with two-domain structure on (001) diamond substrate grown by metal-organic vapor phase epitaxy
33. Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
34. Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
35. Growth mechanism of c-axis-oriented AlN on (0 0 1) diamond substrates by metal-organic vapor phase epitaxy
36. InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy
37. Growth of thick GaInN on grooved (1 0 1¯ 1¯) GaN/(1 0 1¯ 2¯) 4H-SiC
38. One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy
39. Novel UV devices on high-quality AlGaN using grooved underlying layer
40. Relaxation and recovery processes of Al xGa 1−xN grown on AlN underlying layer
41. Control of stress and crystalline quality in GaInN films used for green emitters
42. Control of p-type conduction in a-plane Ga 1−xIn xN (0< x
43. Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates
44. Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
45. High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN
46. Annihilation mechanism of threading dislocations in AlN grown by growth form modification method using V/III ratio
47. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers
48. Epitaxial lateral overgrowth of Al xGa 1−xN ( x>0.2) on sapphire and its application to UV-B-light-emitting devices
49. Oxidative desulfurization and denitrogenation of a light gas oil using an oxidation/adsorption continuous flow process
50. Oxidative desulfurization of fuel oil: Part I. Oxidation of dibenzothiophenes using tert-butyl hydroperoxide
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.