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The heterojunction (HJ) solar cell is one of the superlative alternatives to upgrade traditional single homojunction silicon-based solar cells. The present paper reports on the simulation investigation for examining the high-performance Zinc oxide (ZnO)/Si solar cells with different anti-reflection coatings (ARC), optimizing the absorber, window thickness, and ARC layers. In this study, the parameters were selected, like ZnO as a window layer, Si as an absorber layer, and the thickness of different ARC layers to perform PC1D (personal computer one dimensional) simulation. Aluminum trioxide (Al 2 O 3), Magnesium oxide (MgO), Magnesium fluoride (MgF 2), and Titanium nitrate (TIN) were used as a single layer. Without any ARC layer, 18.8% power conversion efficiency (PCE) and 21.3% PCE were recorded for ZnO/Si solar cells at zero reflectance. The MgF 2 as a single ARC layer of 110 nm thickness has achieved a PCE of 20.8% compared to other anti-reflection coating materials at an absorber layer of 160 μm and window layer of 0.5 μm. The optimized value of carrier lifetime was found to be 100μs for ARC layers. The values of PCE, Voc and Isc gradually increased with increasing carrier lifetime. The maximum values of Voc = 0.6580, Isc = 0.0386 A and PCE with 20.8% were achieved by MgF 2 ARC layer at optimized parameters. [ABSTRACT FROM AUTHOR]

• Role of BSF layers thickness on different parameters of solar cell have been studied. • Optimization of SiGe layer thickness for the best performance. • Reduction in the front surface reflection and increase in absorption due to window layer. • Significant contribution in current density and internal quantum efficiency is notable for longer wavelength. • The maximum efficiency of nearly 17% has been achieved. This manuscript reports on an analytical study required to determine and enhance the effect of the high–low junction based back surface field (BSF) of thin n-CdS/p-SiGe/p + -BaSi 2 heterojunction solar cell. A 0.3 µm thick BSF layer made of extensively available and low-cost barium silicide (BaSi 2) is introduced into the basic SiGe solar cell for the first time. SCAPS-1D simulator is employed to analyze different parameters such as open circuit voltage (V oc), short-circuit current density (J sc), fill factor (FF), quantum efficiency (QE) and conversion efficiency (η) of the device. The SiGe absorber layer thickness is varied from 2 to 50 µm to analyze the device performance, however optimum results are observed between 10 and 15 µm. The BSF BaSi 2 layer thickness changing from 0.1 to 0.8 µm to check the viability of device for optimal efficiency. The present structure anticipates an efficiency of 17.05% for BSF layer thickness of 0.8 µm. In addition, the use of SiGe earth abundant material instead of CIGS having rare earth metals indium and gallium, reduces the overall fabrication cost of the solar cell. [ABSTRACT FROM AUTHOR]