1. High-temperature oxidation resistance behavior and mechanism of HfSiO4-modified C/SiC composites.
- Author
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Qiu, Jintao, Yang, Huiyong, Huang, Juntong, Wang, Lianyi, Luo, Ruiying, Chen, Zhi, Li, Wei, Deng, Chengmou, Li, Wenpeng, Zhang, Jinxuan, Tao, Zejian, Zhong, Shujun, and Teng, Wenhao
- Subjects
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FIELD emission electron microscopes , *FLEXURAL strength - Abstract
To enhance the oxidation resistance of C/SiC composites, HfSiO 4 was introduced into C/SiC composites to modify the matrix utilizing two cyclic alternating preparation modes, thereby yielding the C/SiC-HfSiO 4 composites with a composite matrix. Using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), and thermogravimetric-differential thermal analysis (TG-DTA), a comprehensive investigation was conducted into the oxidation behavior and mechanism of the prepared composites. Results reveal that the C/SiC-HfSiO 4 composites prepared using cyclic alternating preparation modes display the reduced oxidation mass loss and enhanced retention of flexural strength, despite of having higher porosity. In short, the introducing of HfSiO 4 can effectively improve the oxidation resistance of C/SiC composites. The effects of the matrix particle refinement and the synergy between the HfSiO 4 and SiO 2 jointly lead to the enhanced oxidation resistance. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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