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The two-dimensional (2D) inorganic material Nb 3 I 8 , which can be separated into atomic planes, was synthesized through a vapor transport reaction between niobium and iodine. High-purity and cm scale large Nb 3 I 8 crystals were obtained by controlling the growth temperature (600–700 °C) and the stoichiometric ratio between niobium and iodine (using excess I 2 condition, niobium: iodine = 3:9). The semiconductor characteristics were measured by the change of electrical conductivity with temperature (increased conductivity with temperature in the range of 100 K–300 K), and have a band gap of ∼1 eV (∼1200 nm) through Infrared (IR)-visible light absorption analysis. Based on these characteristics, the device characteristics of detecting IR near 1200 nm region were verified. Besides few-layers of Nb 3 I 8 was acquired by the mechanical exfoliation method, and experimentally observed by atomic force microscopy (AFM). This 2D material is expected to have an important role in developing another 2D materials and in new nano-optoelectronic devices using it. • Synthesis of 2D material Nb 3 I 8 in centimeter scale. • Experimental estimation of band gap of Nb 3 I 8 about (∼1 eV) and application to IR detectors. • Bulk to few-layers separation of Nb 3 I 8 sheet using mechanical exfoliation method. [ABSTRACT FROM AUTHOR]