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The searching for green memristor with good environmental robustness will be significant for next generation biodegradable devices. In this work, bio-compatible and non-toxic polydopamine (PDA) was prepared by self-polymerization of dopamine in simple aqueous solution, which was protonated by different acid concentrations (3–12 M HCl) and further fabricated as memory devices with structures of FTO/PDA/Ag. The ON/OFF ratio are enhanced gradually from 2.80 × 102 (PDA-3 M), 8.39 × 102 (PDA-6 M), 5.18 × 103 (PDA-9 M) to 2.41 × 104 (PDA-12 M). The lower conjugated degree, the closer lattice packing and the less radicals after acid treatment are the reasons for the enhanced bipolar resistive switching performances of protonated PDA-based memristor. The resistive switching mechanism is the conductive filament with three processes of Ohm, space charge limited conduction (SCLC) and trap-filled limited (TFL). In addition, the FTO/PDA-12 M/Ag exhibit good environmental robustness, including thermal (100 °C) and ionizing irradiation (UV exposure for 96 h). In all, the facial protonation treatment and the simple sandwich device structures together with good environmental robustness endow its promising applications in as green, stable and biodegradable next generation electron devices. The enhanced bipolar resistive switching performance and good environmental robustness can be achieved in protonated polydopamine based memristor, which is assigned to the lower conjugated degree, the closer lattice packing and the less radicals after acid treatment. [Display omitted] • Bio-compatible polydopamine was protonated by different acid concentrations and further fabricated as memory devices. • The reasons for the enhanced bipolar resistive switching performances of protonated PDA-based memristor was discussed. • The FTO/PDA-12 M/Ag exhibits good thermal (100 °C) and ionizing irradiation (UV exposure for 96 h) robustness. [ABSTRACT FROM AUTHOR]

• Memory devices fabricated with protonated g-C 3 N 4 can exhibit enhanced memory performances, in which acid concentration is crucial. • g-C3N4 treated with 8 M HCl presents the best resistive switching performance, which might be relative to its texture without violent tortuosity. • The protonated g-C 3 N 4 -based memory devices present good environmental robustness, including temperature and ionizing irradiation. • The high tolerant temperature (454 °C) can also be enhanced by doping BN for heat dissipation. Memory devices with simple sandwich structures using the g-C 3 N 4 treated by different concentration acids as active layers have been fabricated, which exhibit enhanced non-volatile bipolar switching performances and good environmental robustness. [Display omitted] The searching for new memory that can work under harsh conditions will be significant for their application in some important fields such as geothermal, oil and aerospace industries. In this work, memory devices with simple sandwich structures using the g-C 3 N 4 treated by different concentration acids as active layers have been fabricated, which exhibit non-volatile behaviors and bipolar switching characteristics. Protonation treatment can enhance the memory performance efficiently compared with un-protonized device. Among them, the device containing g-C 3 N 4 treated with 8 M HCl presents the best resistive switching performance with ON/OFF ratio of 104 and good retention capability, which might be relative to its texture without violent tortuosity. In addition, the protonated g-C 3 N 4 -based memory devices exhibit good environmental robustness, including temperature and ionizing irradiation. Specially, its high tolerant temperature (454 °C) can also be assisted by doping BN for heat dissipation. Their good thermal/irradiating stabilities are assigned to the strong bond energy of C N double bonds localized π-conjugated tri-s-triazine rings. In all, the facial protonation treatment without any functionalization or supporting, the simple sandwich device structure and good environmental robustness endow their promising applications in aerospace and outdoor environment. [ABSTRACT FROM AUTHOR]