1. Spin polarization and magneto-dielectric coupling in Al-modified thin iron oxide films -microwave mediated sol-gel approach.
- Author
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Khalid, Sidra, Riaz, Saira, Naeem, Samia, Akbar, Aseya, Sajjad Hussain, S., Xu, YB, and Naseem, Shahzad
- Subjects
FERRIC oxide ,IRON oxides ,OXIDE coating ,THIN films ,SPIN polarization ,METAL-insulator transitions - Abstract
Production of single-phase materials with multifunctional properties is still a challenge faced by material scientists. In addition, obtaining high spin polarization efficiency in the materials that exhibit multifunctional properties is a big issue. A novel approach is suggested in this work for obtaining multifunctionality and spin polarization in the same material. This approach has combined the effect of microwave radiations and aluminum (Al) doping in iron oxide thin films during synthesis. Combined effect of microwave radiations and Al doping results in controlling / tuning the structural transitions in iron oxide thin films. Pristine and 2–10 wt% Al doped iron oxide thin films are prepared and studied in detail. Raman analysis shows that 2 and 4 wt% Al concentration results in γ-Fe 2 O 3 + Fe 3 O 4 phase with 71.3% and 64.5% of γ-Fe 2 O 3 content, respectively. XRD and Raman analyses confirm the transition from γ-Fe 2 O 3 to Fe 3 O 4 thin films at Al concentrations of 6–10 wt%. Structural transformation shows that microwave radiations catalyzes that Al
3+ ions to occupy the vacancies on B sites of iron oxide thus, lead to the formation of Fe 3 O 4. Observation of Verwey transition ~ 126 K also supports the transition in phases of iron oxide with increase in saturation magnetization from 251.3emu/cm3 (pristine films) to 405.6emu/cm3 (8 wt% Al concentration). High dielectric constant of ~ 135.5 (log f = 5.0) is observed for 8 wt% Al concentration. Conductivity and detailed impedance & modulus analyses depict Mott's hopping phenomenon along with presence of different relaxation times. Coupling between magnetic and dielectric properties is observed at room temperature. Magnetoresistance curves indicate spin polarization efficiency of ~24%. [ABSTRACT FROM AUTHOR]- Published
- 2021
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