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Abstract: A novel ternary Ag-In-Se semiconductor was prepared using spark plasma sintering technique, and its crystal structure and thermoelectric properties were evaluated. XRD analysis and bandgap measurement indicated that this ternary compound crystallizes in a single phase AgIn5Se8 with its bandgap of 1.11 eV, smaller than that of In2Se3, it therefore is of higher electrical conductivity than In2Se3. The highest power factor and thermoelectric figure of merit ZT, thermal conductivity at 863 K are 2.74x10-4 W.K-2 .m-1, 0.61 and 0.39 W.K-2 .m-1, respectively. [Copyright &y& Elsevier]

In Ga 2 Te 3 -rich quasibinary Cd (3 − 3 m ) Ga 2 m Te 3 ( m = 0.75–0.98) system there are two physical phenomena: structural vacancy ( V ) and its related cationic interdiffusion. The former is able to simultaneously govern the carrier, phonon transportations and the bandgap, while the latter merely facilitates the transportation of carrier to some extent. Accordingly, there are multiple transportation behaviors coexisting at a certain m value in this system. These behaviors, which have not only enhanced the carrier concentration ( n ), but have also increased the entropy of the lattice as m value increases, yield the highest thermoelectric figure of merit ( ZT ) of 0.55 at 682 K for m = 0.98. [ABSTRACT FROM AUTHOR]

The ZT value is increased to ~1.05 at 723 K owing to the significant enhancement of the power factor and reduction in lattice thermal conductivity, making the ZT value of Ag 8 Ge 0.9 Sn 0.1 Se 6 stands among the highest in the Ag 8 GeSe 6 system at present. [Display omitted] • The carrier concentration and power factor are greatly improved upon Sn incorporation. • The lattice thermal conductivity decreases simultaneously. • The ZT value of Ag 8 Ge 0.9 Sn 0.1 Se 6 is increased to ~1.05. Argyrodite compound Ag 8 GeSe 6 (AGS) as one of the superionic conductors possesses unique crystal structures: the rigid anionic framework [GeSe 4 ]4- and mobile cation (Ag). Hence its lattice thermal conductivity is rather low due to the action of the mobile cation (Ag). However, this compound has neither high carrier concentration (0.15 × 1016 cm−3 at 300 K and 0.61 × 1016 cm−3 at 370 K) nor high thermoelectric performance (the figure of the merit (ZT) of<0.4). So in this work, we enhance the carrier concentration by more than one order of magnitude at 373 K through the band structure engineering via the substitution of Sn for Ge. In the mean time, the lattice thermal conductivity (κ L) reduces from 0.26 W/mK to 0.16 W/mK at 750 K. As a consequence, the ZT value of Ag 8 Ge 0.9 Sn 0.1 Se 6 is boosted to ~ 1.05. This value is about 2.8 times that of the pristine AGS (0.38 at 750 K) and stands among the highest in this family so far. The above results confirm that the isoelectronic substitution of Sn for Ge in the anionic framework of AGS is an effective way to realize its high TE performance. [ABSTRACT FROM AUTHOR]