1. Role of substrate outgassing on the formation dynamics of either hydrophilic or hydrophobic wood surfaces in atmospheric-pressure, organosilicon plasmas
- Author
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Pierre Blanchet, Jérôme Esvan, Eric Bêche, Nicolas Gherardi, Luc Stafford, Andranik Sarkissian, O. Levasseur, Bernard Riedl, Nicolas Naudé, Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - INPT (FRANCE), Université de Montréal - UdeM (CANADA), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), FPInnovations (CANADA), Plasmionique (CANADA), Université de Perpignan Via Domitia - UPVD (FRANCE), Université Laval (CANADA), Laboratoire Plasma et Conversion d'Energie - LAPLACE (Toulouse, France), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE), Université de Montréal (UdeM), LAboratoire PLasma et Conversion d'Energie (LAPLACE), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées, Matériaux et Procédés Plasmas (LAPLACE-MPP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse III - Paul Sabatier (UT3), Procédés, Matériaux et Energie Solaire (PROMES), Université de Perpignan Via Domitia (UPVD)-Centre National de la Recherche Scientifique (CNRS), Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC), FPInnovations, and Université Laval [Québec] (ULaval)
- Subjects
Hexamethyldisiloxane ,Materials science ,Matériaux ,Biochimie ,Organosilicon plasmas ,02 engineering and technology ,Ingénierie de l'environnement ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Contact angle ,chemistry.chemical_compound ,0103 physical sciences ,Materials Chemistry ,Organic chemistry ,Génie chimique ,010302 applied physics ,Functional coatings ,Substrate (chemistry) ,[CHIM.MATE]Chemical Sciences/Material chemistry ,Surfaces and Interfaces ,General Chemistry ,Atmospheric-pressure plasmas ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Black spruce ,Dielectric barrier discharges ,Wood ,Surfaces, Coatings and Films ,Outgassing ,chemistry ,Chemical engineering ,Wetting ,0210 nano-technology ,Layer (electronics) ,Deposition (chemistry) - Abstract
International audience; This work examines the influence of substrate outgassing on the deposition dynamics of either hydrophilic or hydrophobic coatings on wood surfaces in organosilicon, dielectric barrier discharges. Sugar maple and black spruce wood samples were placed on the bottom electrode and the discharge was sustained in N2–HMDSO (hexamethyldisiloxane) gas mixtures by applying a 24 kV peak-to-peak voltage at 2 kHz. Current–voltage characteristics revealed a transition from a filamentary to a homogeneous discharge with increasing plasma treatment time, t. Based on opticalemission spectroscopy, the filamentary behaviorwas ascribed to the release of air and humidity from the wood substrate following discharge exposure which produced significant quenching of N2 metastables. This effect vanished at longer treatment times due to the nearly complete “pumping” of products from the wood substrate and the progressive deposition of a “barrier” layer. Analysis of the surface wettability through static, water contact angles (WCAs) and of the surface composition through Fourier-Transform-Infra-Red-Spectroscopy and X-ray-Photoelectron-Spectroscopy indicated that for t b 10 min, the wood surface was more hydrophilic due to the formation of a SiOx layer, a typical behavior for HMDSO deposition in presence of oxygen. On the other hand, for t > 10 min, the static WCA increased up to ~140° due to the deposition of hydrophobic Si(CH3)3-O-Si(CH3)2, Si(CH3)3, and Si(CH3)2 functional groups.
- Published
- 2013
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