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Grain orientation and competition during growth has been analyzed in directionally solidified multi-crystalline silicon samples. In situ and real-time characterization of the evolution of the grain structure during growth has been performed using synchrotron X-ray imaging techniques (radiography and topography). In addition, Electron Backscattered Diffraction has been used to reveal the crystalline orientations of the grains and the twin relationships. New grains formed during growth have two main origins: random nucleation and twinning. It is demonstrated that the solidified samples are dominated by P3 twin boundaries showing that twinning on {111} facets is the dominant phenomenon. Moreover, thanks to the in situ characterization of the growth, it is shown that twins nucleate on {111} facets located at the sides of the sample and at grain boundary grooves. The occurrence of multiple P3 twins during growth prevents the initial grains from developing all along the sample, and twin boundaries with higher order coincidence site lattices can form at the encounter of two grains in twin position. The grain competition phenomenon following nucleation and twinning acts as a grain selection mechanism leading to the final grain structure.