1. Control of threshold voltage of organic field-effect transistors by space charge polarization
- Author
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Hideyuki Murata, Koudai Konno, and Heisuke Sakai
- Subjects
business.industry ,Chemistry ,Gate dielectric ,Metals and Alloys ,Analytical chemistry ,Surfaces and Interfaces ,Dielectric ,Space charge ,Threshold voltage shift ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,Organic semiconductor ,Organic field-effect transistors (OFETs) ,Electric field ,Polarization ,Materials Chemistry ,Optoelectronics ,Field-effect transistor ,business ,Polarization (electrochemistry) - Abstract
We demonstrate organic field-effect transistors (OFETs) with an ion-dispersed polymer for the gate dielectrics. By applying external electric field ( V ex ), the dispersed ions can migrate by electrophoresis and separated ion pairs form space charge polarization in the gate dielectrics. After V ex was applied, the drain current is increased over 7 times and threshold voltage is decreased from − 12.9 V to − 2.9 V. The shift direction of V th is controllable by the polarity of the V ex . Results of ultraviolet/visible differential absorption study reveal that the active layer of OFETs is charged not only electrostatically but electrochemically with increasing the time after V ex was applied.
- Published
- 2009