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3 results on '"Marc Bernacki"'

1. A novel level-set finite element formulation for grain growth with heterogeneous grain boundary energies

Author

Julien Fausty, Nathalie Bozzolo, Daniel Pino Muñoz, and Marc Bernacki

Subjects
Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

Grain growth is a ubiquitous thermally activated mechanism by which the microstructures of crystalline materials coarsen at relatively high temperatures. Individual grain boundaries in a material microstructure have their own structure and their own behavior and, as such, uniform grain boundary energy modelling approaches arrive at their predictive limits when it comes to certain types of local phenomena (abnormal grain growth, thermal twinning, etc.). This work presents a new heterogeneous grain boundary energy formulation for grain growth built on the thermodynamics of the phenomenon that can handle high grain boundary energy gradients. Using a full field finite element numerical framework it verifies the precision and convergence of this new formulation. Keywords: Grain growth, Grain boundary energy, Finite element, Level-set, Triple junction, Modelling

Published
2018
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2. Analysis of stress intensity factors and T-stress to control crack propagation for kerf-less spalling of single crystal silicon foils

Author

Pierre-Olivier Bouchard, David M. Parks, Marc Bernacki, Massachusetts Institute of Technology. Department of Mechanical Engineering, Parks, David Moore, Centre de Mise en Forme des Matériaux (CEMEF), MINES ParisTech - École nationale supérieure des mines de Paris, Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-Centre National de la Recherche Scientifique (CNRS), Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Centre de Mise en Forme des Matériaux ( CEMEF ), Centre National de la Recherche Scientifique ( CNRS ) -PSL Research University ( PSL ) -MINES ParisTech - École nationale supérieure des mines de Paris, and Massachusetts Institute of Technology ( MIT )

Subjects
Materials science, General Computer Science, Silicon, [ SPI.MAT ] Engineering Sciences [physics]/Materials, General Physics and Astronomy, chemistry.chemical_element, crack propagation, 02 engineering and technology, 01 natural sciences, 7. Clean energy, [SPI.MAT]Engineering Sciences [physics]/Materials, Monocrystalline silicon, 0103 physical sciences, Forensic engineering, General Materials Science, stress intensity factors, Composite material, Stress intensity factor, 010302 applied physics, Photovoltaic system, mono silicon, Fracture mechanics, Cleavage (crystal), General Chemistry, 021001 nanoscience & nanotechnology, Spall, Finite element method, Computational Mathematics, chemistry, Mechanics of Materials, T-stress, crack stability, 0210 nano-technology
Abstract

Monocrystalline silicon (called mono silicon) is extensively used in the electronic and solar photovoltaic industries. During the last decade, many new manufacturing processes have been developed to improve solar cells’ efficiency while reducing their cost of production. This paper focuses on a kerf-less technique based on the controlled fracture of silicon foils by depositing an adherent stress-inducing layer on {hkl} cleavage plans. A finite element model (FEM) is defined to study the stress intensity factors (SIFs) associated with a pre-crack located at a certain depth from the interface between the silicon substrate and the stress-inducing layer. A parametric study elucidates the dependence of the crack propagation direction on process variables including thickness of the stress-inducing layer, silicon substrate thickness, and pre-crack depth. The use of stress intensity factors and the T-stress characterize the crack propagation. These results are essential for efficient control of this kerf-less spalling process., Seventh Framework Programme (European Commission) (European project SUGAR)

Published
2012

3. Contributor contact details

Author

Jianguo Lin, Daniel Balint, Maciej Pietrzyk, Takashi Ishikawa, Yvan Chastel, Roland Logé, Marc Bernacki, Jan Kusiak, Danuta Szeliga, Łukasz Sztangret, B. López, J.M. Rodriguez-Ibabe, A. Rosochowski, L. Olejnik, Roman Kuziak, Jian Cao, Jingqi Cai, Joel Wilsius, Janusz Majta, Krzysztof Muszka, Debin Shan, Liang Zhen, Lihua Zhan, Christof Sommitsch, Rene Radis, Alfred Krumphals, Martin Stockinger, and Daniel Huber

Published
2012

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