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The necessary information on the formation of high manganese silicide (Mn4Si7) coating by magnetron sputtering method is presented in this work. The technology and basic modes of creating the necessary targets for a magnetron sputtering device are presented. Targets were created by adding silicon and manganese powders in the required amount and heating them under vacuum conditions at high temperature and pressure. Thin silicide films (thin coatings) of different thicknesses were formed on the surface of silicon dioxide from the produced targets using the method of magnetron sputtering. The electrophysical and thermoelectric properties of the produced films were studied using physical and optical methods.Due to the change in the structure of the coatings during subsequent heat treatment, the Seebeck coefficient noticeably increases.

Plasma fluctuation dispersion has been theoretically and experimentally studied in monocrystal samples of Si (111) and Ge (111). It has been shown that the dispersion depends on crystallographic orientations of materials under study. In this work, the dispersion effects in the CLEE spectra, which manifest themselves in bulk samples of Si and Ge, have been studied. The loss energy electron was studied by the CLEE method upon their reflection from Si(111) and Ge(111) at different angles of incidence of the electron beam on the surface. Calculation of the total electron energy loss with formula (5) shows that the form of the CLEE spectrum of primary electrons depends on the nature and magnitude of the electron density in a given direction and is in satisfactory agreement with the experimental data. Thus, the theoretical and experimental results show that in the case of single-crystalline Si and Ge, with increasing k, the values of the bulk plasma oscillation increase by 2–3 eV.