1. Ion Implantation Technology For III-V Heterojunction Devices
- Author
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R. Esagui, J. R. Lothian, S. N. G. Chu, Mark C Ridgway, Cammy R. Abernathy, T. R. Fullowan, Chennupati Jagadish, R. Bylsma, Fan Ren, James Williams, Rose Kopf, Stephen J. Pearton, Robert Elliman, William S. Hobson, and P. W. Wisk
- Subjects
Masking (art) ,Materials science ,business.industry ,Bipolar junction transistor ,Heterojunction ,Activation energy ,equipment and supplies ,Laser ,Ion ,law.invention ,Ion implantation ,law ,Electronic engineering ,Optoelectronics ,business ,Quantum well - Abstract
The use of keV and MeV implantation of non-dopant ions such as F + , 0 + and H + for isolation of GaAs/AlGaAs heterojunction bipolar transistors and 0.98 μm strained quantum well InGaAs/GaAs lasers is reported. Long- term aging studies at 200 °C of implant-isolated regions show excellent stability over the period of the test (∼50 days). The high resistance behavior is retained and the activation energy of the material (typically ∼0.75 eV for 0 + or F + implantation and ∼0.50 eV for H + implantation) is unchanged by the aging at 200°C. A novel Au-based multilayer masking scheme for high energy (5 MeV) implants is also described. This enables use of a single implant to isolate HBTs or lasers, replacing the 11-implant scheme necessary when using conventional keV implants.
- Published
- 1993
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