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Two methods, ion implantation and crystallization at two different temperatures, have been investigated to reduce the process time and to improve the structural properties of polycrystalline SiGe films obtained by solid phase crystallization for thin film transistors applications. The starting material was amorphous SiGe films deposited by low pressure chemical vapour deposition on oxidized silicon substrates. The crystallization kinetics and microstructure were analyzed in both cases using transmission electron microscopy and X-ray diffractometry. The first method consisted of the ion implantation with C or F and the subsequent crystallization at 600 ºC. The implanted samples show greater grain sizes, smaller grain size dispersion and stronger (111) preferred orientation than the unimplanted ones. The second method consisted of the crystallization by sequential annealing at two different temperatures. The samples were processed by rapid thermal annealing at 625 ºC for several minutes to form a certain density of crystalline nuclei. The subsequent crystallization at 525 ºC takes place mainly from the previously induced nuclei. The process time is reduced by 50 %. The grain size in the samples processed in this way is at least equal than in the samples crystallized without the RTA treatment. This crystallization method does not affect the preferred orientation of the grains.Se han investigado dos métodos, implantación iónica y cristalización a dos temperaturas, para reducir el tiempo de proceso y mejorar la estructura de películas policristalinas de SiGe obtenidas por cristalización en fase sólida aplicables en transistores de película delgada. Se partió de capas amorfas de SiGe obtenidas mediante depósito químico en fase vapor a baja presión sobre Si oxidado térmicamente. En ambos casos se estudió la cinética de cristalización y la microestructura de las capas mediante microscopía electrónica de transmisión y difractometría de rayos X. El primer método consistió en la implantación iónica de las muestras con C o F y la posterior cristalización a 600 ºC. Las muestras implantadas tienen tamaño de grano mayor y más uniforme que las no implantadas y los granos presentan una orientación (111) más acentuada. El segundo método consistió en la cristalización mediante dos recocidos a temperaturas distintas. Las muestras fueron procesadas a 625 ºC mediante procesado térmico rápido durante varios minutos para formar una cierta densidad de núcleos. Seguidamente se cristalizaron las capas a 525 ºC partiendo de los núcleos creados. La duración del proceso se reduce hasta en un 50 %. El tamaño de grano es igual o mayor que en las muestras no procesadas previamente y la orientación de los granos no se ve alterada.

© 2014 Elsevier B.V. All rights reserved. Three copper base materials were fabricated following different routes: cast Cu-1 wt.%Y (C-Cu1Y) produced by vacuum induction melting, and Cu-1 wt.%Y (PM-Cu1Y) and Cu-1 wt.%Y2O3 (PM-Cu1Y2O3) both processed by a powder metallurgy route and sintering by hot isostatic pressing. PM-Cu1Y alloy was prepared by cryomilling and PM-Cu1Y2O3 by conventional milling at room temperature. The materials were characterized by X-ray diffraction, optical and electron microscopy and microhardness measurements. C-Cu1Y presents a characteristic eutectic microstructure while PM-Cu1Y2O3 exhibits a composite like microstructure. Electron microscopy analyses of as-HIP PM-Cu1Y revealed irregular decoration of yttrium-rich oxides at the grain boundaries and an inhomogeneous dispersion of polygonal shaped yttrium-rich oxides dispersed in the Cu matrix. Tensile tests performed on PM-Cu-1Y on the temperature range of 293-773 K have showed a decrease of the yield strength at temperatures higher than 473 K, and monotonically decrease of the ultimate tensile strength and maximum plastic strain on increasing temperature.

Coarse-grained commercially pure (CP) Titanium is subjected to hydrostatic extrusion resulting in the formation of ultrafine lamellar-type microstructure having very strong fiber texture. Uni-axial tensile tests of longitudinal and transverse specimens are carried out to study anisotropy of uni-axial deformation behavior of hydrostatically extruded CP Titanium. Small punch testing of longitudinal and transverse specimens is performed to study the anisotropy of its bi-axial deformation behavior. It is demonstrated that there is significant anisotropy of both uni-axial and bi-axial deformation of CP Titanium after hydrostatic extrusion which is related to the specific microstructure and texture developed in the material during hydrostatic extrusion. This work was carried out in frames of the European project LIMEDU (FP7 ERA-NET MATERA+2009, Project No MATERA/ESM- 1889) funded by Fundacion MADRI+D and by the National Centre for Research and Development (Project NCBiR/ERA-NET MATERA+/03/ 2011).

ZnO/MnOx nano-thin multilayers are fabricated by pulsed laser deposition with a sectioned target or “cake” technique. Structure and magnetic properties are measured, finding a magnetic signal that scales better with the number of interfaces than with the film volume, and an interlayer interdiffusion that happens at remarkably low film growth temperatures., The authors gratefully acknowledge financial support from CSIC under projects CSIC: PIF CSIC 2006-50F0122, CSIC 2007-50I015 and from the Spanish “Ministerio de Ciencia y Tecnología” MAT2008-06330 and MAT2007-68845-C02-01. TEM work has been done at the LABMET, associated to the network Red de Laboratorios of the CAM.