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Complementary metal-oxide-semiconductor (CMOS) image sensors have become the mainstay of imaging technology with applications ranging from low-end requirements such as that of toys to high-end scientific applications. This has been achieved by several advances including noise reduction, pixel count, capture speed enhancement, global shuttering, power reduction, and dynamic range improvement. This chapter reviews circuits utilized to provide these improvements in CMOS image sensors.

Complementary metal-oxide-semiconductor (CMOS) image sensors have become the mainstay of imaging technology with applications ranging from low end requirements such as that of toys to high end scientific applications. This has been achieved by several advances including noise reduction, pixel count, capture speed enhancement, global shuttering, power reduction as well as dynamic range improvement. This chapter reviews circuits utilised to provide these improvements in CMOS image sensors.