Search

We report on an integrated approach to obtain two color emission from a semiconductor ring laser with filtered optical feedback. This feedback is realized on-chip by employing two arrayed waveguide gratings to split/recombine light into different wavelength chan nels. Semiconductor optical amplifiers are used in the feedback loop to control the feed back strength of each wavelength channel independently. Results show that the effective gain of the d(tferent anodes is the key parameter which has to be balanced to obtain two color emission. This can be aclueved by tuning the injection current in each amplifier

In this work we describe the fabrication and characterization of couplers realized with a wet etching process that is compatible with the standard COBRA active-passive process. The implementation of this broadband structure allows for wafer-scale waveguide loss and absolute-wavelength measurements.

By implementing SOAs that guide two waveguides through a single contact active section, we can reduce dimensions ofphotonic integrated circuits (Tics.) and decrea,ce the number of electrical contacts of current injection. In this paper we demonstrate linear 4-channel and 8-channel A WG-based lasers that take advantage of such SOAs. This resulted in a reduction of the required number of active regions and contacts by a factor Iwo. Measurements showed that these sources operate with an output power of I in W per A WG-channel and side-mode suppression ratio better than 40 dB. The lasers were fabricated in a multi-project wafer run on an indium phosphide (InP,) based generic photonic integration platform.

Particle detectors in High Energy Physics experiments provide huge amounts of data which needs to be transported to the data center. Fiber-optic links provide a highcapacity low-mass solution. Howevem~ the petformance of semiconductor lasers used in such links is shown to degrade by the amount of radiation that is generated when particles with high energy collide. We investigate a wavelength-division multiplexing (WDM,) scheme in which only the semiconductor modulators are in the high radiation environment; and test the modulators for radiation hardness. The InP-based WDM modulator circuits are designed .for fabrication on generic integration platforms. The samples will be irradiated with a 23 Me V proton beam at Karlsruhe Institute of Technology (KIT) up to various doses. Here we discuss the system concept and preliminary measurements of non-irradiated samples that will later be compared with the irradiated samples.

In this paper we numerically investigate the thermal crosstalk reduction that can be obtained by etching deep trenches in Indium Phosphide based photonic integrated circuits. We show how deep trenches between adjacent components inod(j5.’ the heat transfer path. The current injected in active components and the geometly of the trenches are the parameters considered in our analysis. We demonstrate how the geometry of the trenches play a role in the reduction of the thermal crosstalk. The nwnerical results show a reduction of the distance between components up to 50%.