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Different copper nanostructures have been deposited onto porous silicon (PS) by using HF-based solutions of CuSO4 and immersion technique. The variation of the porous template parameters and deposition regimes has been found to allow obtaining of copper nanoparticles, copper rough films and porous copper layers. The dimensions, roughness, structural parameters and phase composition of the obtained copper nanostructures have been established.

Nickel nanowires have been formed by the stationary electrochemical deposition of nickel into mesoporous silicon from the modified Watts bath. The polycrystalline nature of the Ni deposit has been established as well as expansion of its lattice parameter in comparison with bulk nickel. Control of the potential of porous silicon during electrochemical deposition allows to determine the moment of complete filling of pore space with Ni. The maximum achieved filling factor was 67% of the pores. The pore dimensions have been found to define the length and the diameter of the Ni nanowires that have equaled to 10 um and 100-120 nm, respectively.