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Chen P, Zhang X, Jiang K, et al. Int J Nanomedicine. 2019;14:10119–10122. Page 10120, left column, Materials And Methods section, line 2, the text “30 ~ 50 nm thick” should read “30 ~ 60 nm thick”. Page 10120, Figure 2, the Y axis “IDS(nA)” should read “IDS(pA)”. Figure 3 on page 10120, the authors have advised the figure was created using the wrong sample and therefore, is incorrect. The correct Figure 3 is shown below. Figure 3 The C-V curve of the present n-type TFTs could be easily changed to that of p-type TFTs. The authors apologize for these errors and advise they do not affect the results of the paper.

Shaocheng Qi,1 Yongbin Hu,1 Chaoqi Dai,1 Peiqin Chen,1 Zhendong Wu,1 Thomas J Webster,2 Mingzhi Dai1,3 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of China; 2Department of Chemical Engineering, Northeastern University, Boston, MA, USA; 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of ChinaCorrespondence: Thomas J Webster Department of Chemical EngineeringNortheastern University, Boston, MA, USAEmail th.webster@neu.eduMingzhi DaiNingbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaEmail daimz@nimte.ac.cnBackground: As a key component in artificial intelligence computing, a transistor design is updated here as a potential alternative candidate for artificial synaptic behavior implementation. However, further updates are needed to better control artificial synaptic behavior. Here, an updated channel-electrode transistor design is proposed as an artificial synapse device; this structure is different from previously published designs by other groups.Methods: A semiconductor characterization system was used in order to simulate the artificial synaptic behavior and a scanning electron microscope was used to characterize the device structure.Results: It was found that the electrode added to the transistor channel had a strong impact on the representative transmission behavior of such artificial synaptic devices, such as excitatory postsynaptic current (EPSC) and the paired-pulse facilitation (PPF) index.Conclusion: These behaviors were tuned effectively and the impact of the channel electrode is explained by the combined effects of the joint channel electrode and conventional gate. The voltage dependence of such oxide devices suggests more capability to emulate various synaptic behaviors for numerous med

Peiqin Chen,1,2 Xingye Zhang,2 Kemin Jiang,2 Qiang Zhang,2 Shaocheng Qi,2 Weidong Man,1 Thomas J Webster,3 Mingzhi Dai2 1Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Wuhan Institute of Technology, Wuhan, People’s Republic of China; 2Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, People’s Republic of China; 3Department of Chemical Engineering, Northeastern University, Boston, MA, USACorrespondence: Thomas J WebsterDepartment of Chemical Engineering, Northeastern University, Boston, MA 02115, USATel +1-617-373-6585Email th.webster@neu.eduMingzhi DaiNingbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, People’s Republic of ChinaTel +86 151 5831 3993Email daimz@nimte.ac.cnAbstract: Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.Keywords: electrical properties, ntype semiconductor, ptype semiconductor, currentvoltage, IV, capacitancevoltage, CV, sensors