1. Preparation of Semiconductive Epitaxial BaTiO3 Thin Film and its Electrical Properties
- Author
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Hiroshi Funakubo, Kazuo Shinozaki, Nobuyasu Mizutani, Tsuyoshi Hioki, and Osamu Sakurai
- Subjects
Materials science ,business.industry ,Reducing atmosphere ,General Chemistry ,Substrate (electronics) ,Condensed Matter Physics ,Epitaxy ,Semiconductor ,Electrical resistivity and conductivity ,Materials Chemistry ,Ceramics and Composites ,Metalorganic vapour phase epitaxy ,Thin film ,Composite material ,business - Abstract
Submicron semiconductive epitaxial BaTiO3 thin film was prepared on (100) MgO substrate. An epitaxially grown BaTiO3 film prepared by MOCVD was coated with ethanol solution of LaCl3 and heated under a reducing atmosphere at 800-1200°C. The resistivity was less than 1Ω·cm and the carrier concentration was in the order of 1018cm-3. The film was n-type semiconductor and the resistivity increased abruptly with the increase in temperature above 600°C in air because of the decrease of the carrier concentration.
- Published
- 1996
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