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The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump effect and the skew scattering effects are systematically treated, and analytical expressions for the conductivities are obtained in terms of the Fermi level, the spatial orientation of the surface magnetization and the concentration of magnetic and non-magnetic impurities. We demonstrate that the AHE can change sign by altering the orientation of the surface magnetization, the concentration of the impurities and also the position of the chemical potential, in agreement with recent experimental observations. Hence, each contribution to the AHE, or even the whole AHE, can be turned off by properly adjusting the given parameters. For example, one can turn off the anomalous hall conductivity in a system with in-plane magnetization by pushing the system into the fully metallic regime.

The Shockley-Queisser limit is one of the most fundamental results in the field of photovoltaics. Based on the principle of detailed balance, it defines an upper limit for a single junction solar cell that uses an absorber material with a specific band gap. Although methods exist that allow a solar cell to exceed the Shockley-Queisser limit, here we show that it is possible to exceed the Shockley-Queisser limit without considering any of these additions. Merely by introducing an absorptivity that does not assume that every photon with an energy above the band gap is absorbed, efficiencies above the Shockley-Queisser limit are obtained. This is related to the fact that assuming optimal absorption properties also maximizes the recombination current within the detailed balance approach. We conclude that considering a finite thickness for the absorber layer allows the efficiency to exceed the Shockley-Queisser limit, and that this is more likely to occur for materials with small band gaps., Comment: 6 pages, 3 figures

A first-principles study of the structural and electronic properies of carbon impurities in CuIn$_{1-x}$Ga$_x$Se$_{2}$ is presented. Carbon is present in organic molecules in the precursor solutions used in nonvacuum growth methods, making more efficient use of material, time and energy than traditional vacuum methods. The formation energies of several carbon impurities are calculated using the hybrid HSE06 functional. C$_{\mathrm{Cu}}$ acts as a shallow donor, C$_{\mathrm{In}}$ and interstitial C yield deep donor levels in CuInSe$_{2}$, while in CuGaSe$_{2}$ C$_{\mathrm{Ga}}$ and interstitial C act as deep amphoteric defects. So, if present, these defects reduce the majority carrier (hole) concentration by compensating the acceptor levels and become trap states for the photogenerated minority carriers (electrons). However, the formation energies of the calculated carbon impurities are high, even under C-rich growth conditions. Therefore, these impurities are not likely to form and will probably be expelled to the intergranular region and out of the absorber layer.

The stable and unstable solutions of a square 2D extreme type-II superconductor are studied in the field of a magnetic disc. We use a preconditioned Newton-Krylov solver to find the solutions and use numerical continuation to track the solutions as the field strength varies. For a disc with a small radius, we have identified generic scenarios through which the state loses and regains its stability.

Kirchhoff's scalar diffraction theory is applied throughout photon and electron optics. It is based on the stationary electromagnetic or Schr\"odinger wave equation, and is useful in describing interference phenomena for both light and matter waves. Here, Kirchhoff's diffraction theory is derived from the relativistic Dirac equation, thus reformulated to work on Dirac spinors. The parallels with the "classic" scalar theory are highlighted, and a basic interpretation of the result obtained for the Fraunhofer diffraction limit is given. The goal of this paper is to emphasize the similarity between the two equations on the most fundamental level.

We modeled the electron and hole states in Si/SiO2 quantum wells within a basis of standing waves using the 30-band k.p theory. The hard-wall confinement potential is assumed, and the influence of the peculiar band structure of bulk silicon on the quantum-well sub-bands is explored. Numerous spurious solutions in the conduction-band and valence-band energy spectra are found and are identified to be of two types: (1) spurious states which have large contributions of the bulk solutions with large wave-vectors (the high-k spurious solutions) and (2) states which originate mainly from the spurious valley outside the Brillouin zone (the extra-valley spurious solutions). An algorithm to remove all those nonphysical solutions from the electron and hole energy spectra is proposed. Furthermore, slow and oscillatory convergence of the hole energy levels with the number of basis functions is found and is explained by the peculiar band mixing and the confinement in the considered quantum well. We discovered that assuming the hard-wall potential leads to numerical instability of the hole states computation. Nonetheless, allowing the envelope functions to exponentially decay in a barrier of finite height is found to improve the accuracy of the computed hole states., Comment: 8 pages, 8 figures

We describe a systematic approach for the efficient numerical solution of nonlinear Schr��dinger-type partial differential equations of the form $(K +V + g|��|^2)��=0$, with an energy operator $K$, a scalar potential $V$, and a scalar parameter $g$. Instrumental to the approach are developments in numerical linear and nonlinear algebra, specifically numerical parameter continuation. We demonstrate how a continuous sequence of solutions can be obtained regardless of their stability, so that finally the spectrum of stable and unstable solutions in the specified parameter range is fully revealed. The method is demonstrated for the GL equation in a three-dimensional superconducting domain with an inhomogeneous magnetic field, a numerically demanding problem known to have an involved solution landscape.