1. Coherent Quantum Oscillations in a Silicon Charge Qubit
- Author
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Shi, Zhan, Simmons, C. B., Ward, Daniel. R., Prance, J. R., Mohr, R. T., Koh, Teck Seng, Gamble, John King, Wu, Xian., Savage, D. E., Lagally, M. G., Friesen, Mark, Coppersmith, S. N., and Eriksson, M. A.
- Subjects
Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,FOS: Physical sciences ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,Quantum Physics (quant-ph) - Abstract
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism., Comment: 5 pages plus 3 page supplemental (8 pages total)
- Published
- 2012
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