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The Kagome lattice is an important fundamental structure in condensed matter physics for investigating the interplay of electron correlation, topology, and frustrated magnetism. Recent work on Kagome metals in the AV3Sb5 (A = K, Rb, Cs) family, has shown a multitude of correlation-driven distortions, including symmetry breaking charge density waves and nematic superconductivity at low temperatures. Here we study the new Kagome metal Yb0.5Co3Ge3 and find a temperature-dependent kink in the resistivity that is highly similar to the AV3Sb5 behavior and is commensurate with an in-plane structural distortion of the Co Kagome lattice along with a doubling of the c-axis. The space group is found to lower from P6/mmm to P63/m below the transition temperature, breaking the in-plane mirror planes and C6 rotation, while gaining a screw axis along the c-direction. At very low temperatures, anisotropic negative magnetoresistance is observed, which may be related to anisotropic magnetism. This raises questions about the types of the distortions in Kagome nets and their resulting physical properties including superconductivity and magnetism.

Current-induced control of magnetization in ferromagnets using spin-orbit torque (SOT) has drawn attention as a new mechanism for fast and energy efficient magnetic memory devices. Energy-efficient spintronic devices require a spin-current source with a large SOT efficiency (${\xi}$) and electrical conductivity (${\sigma}$), and an efficient spin injection across a transparent interface. Herein, we use single crystals of the van der Waals (vdW) topological semimetal WTe$_2$ and vdW ferromagnet Fe$_3$GeTe$_2$ to satisfy the requirements in their all-vdW-heterostructure with an atomically sharp interface. The results exhibit values of ${\xi}{\approx}4.6$ and ${\sigma}{\approx}2.25{\times}10^5 {\Omega}^{-1} m^{-1}$ for WTe$_2$. Moreover, we obtain the significantly reduced switching current density of $3.90{\times}10^6 A/cm^2$ at 150 K, which is an order of magnitude smaller than those of conventional heavy-metal/ ferromagnet thin films. These findings highlight that engineering vdW-type topological materials and magnets offers a promising route to energy-efficient magnetization control in SOT-based spintronics., Comment: 19 pages, 4 figures

The superconducting analog to the semiconducting diode, the Josephson diode, has long been sought, with multiple avenues to realization proposed by theorists. Exhibiting magnetic-field free, single directional superconductivity with Josephson coupling of the supercurrent across a tunnel barrier, it would serve as the building-block for next-generation superconducting circuit technology. Here we realized the field-free Josephson diode using an inversion symmetry breaking heterostructure of $\mathrm{NbSe_2/Nb_3Br_8/NbSe_2}$. We demonstrate, for the first time without magnetic field, the junction can be superconducting in one direction while normal in the opposite direction. Based on that, half-wave rectification of a square-wave excitation was achieved with low switching current density ($~2.2\times 10^2 \mathrm{A/cm^2}$), high rectification ratio ($~10^4$) and high robustness (at least $10^4$ cycles). We also demonstrate symmetric $\Delta I_\mathrm{c}$ (the difference between positive and negative critical currents) behavior with field and the expected Fraunhofer current phase relation of a Josephson junction. This realization raises fundamental questions about the Josephson effect through an insulator when breaking symmetry, and opens the door to ultralow power, high speed, superconducting circuits for logic and signal modulation., Comment: 30 pages, 14 figures

Motivated by the famous and pioneering mathematical works by Perelman, Hamilton, and Thurston, we introduce the concept of using modern geometrical mathematical classifications of multi-dimensional manifolds to characterize electronic structures and predict non-trivial electron transport phenomena. Here we develop the Fermi Surface Geometry Effect (FSGE), using the concepts of tangent bundles and Gaussian curvature as an invariant. We develop an index, $\mathbb{H}_F$, for describing the the "hyperbolicity" of the Fermi Surface (FS) and show a universal correlation (R$^2$ = 0.97) with the experimentally measured intrinsic anomalous Hall effect of 16 different compounds spanning a wide variety of crystal, chemical, and electronic structure families, including where current methods have struggled. This work lays the foundation for developing a complete theory of geometrical understanding of electronic (and by extension magnonic and phononic) structure manifolds, beginning with Fermi surfaces. In analogy to the broad impact of topological physics, the concepts begun here will have far reaching consequences and lead to a paradigm shift in the understanding of electron transport, moving it to include geometrical properties of the E vs k manifold as well as topological properties., Comment: 9 pages, 4 figures

As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices., Comment: 7 Pages, 3 Figures, 1 Table

The spin Hall effect (SHE) is the conversion of charge current to spin current, and non-magnetic metals with large SHEs are extremely sought after for spintronic applications, but their rarity has stifled widespread use. Here we predict and explain the large intrinsic SHE in $\beta$-W and the A15 family of superconductors: W$_3$Ta, Ta$_3$Sb, and Cr$_3$Ir having spin hall conductivities (SHC) of -2250, -1400, and 1210 $\frac{\hbar}{e}(\Omega cm)^{-1}$, respectively. Combining concepts from topological physics with the dependence of the SHE on the spin Berry curvature (SBC) of the electronic bands, we propose a simple strategy to rapidly search for materials with large intrinsic SHEs based on the following ideas: high symmetry combined with heavy atoms gives rise to multiple Dirac-like crossings in the electronic structure, without sufficient symmetry protection these crossings gap due to spin orbit coupling (SOC), and gapped Dirac crossings create large spin Berry curvature.

Topological materials which possess topologically protected surface states have attracted much attention in recent years. In this work, we study the critical current of superconductor/inversion symmetry breaking topological material/superconductor junctions. We found surprisingly that, in topological materials with broken inversion symmetry, the magnitude of the critical Josephson currents $|I^{+}_c(B)|$ at fixed magnetic field $B$ is not the same for critical currents $|I^{-}_c(B)|$ flowing in the opposite direction. Moreover, the critical currents violate the $| I_{c}^{\pm}(B)| = |I_{c}^{\pm}(-B)|$ relation and give rise to asymmetric Fraunhofer patterns. We call this phenomenon asymmetric Josephson effect (AJE). AJE can be use to detect inversion symmetry breaking in topological materials such as in quantum spin Hall systems and Weyl semimetals., Comment: 4+ pages, 4 figures. Comments are welcome

Magnetoresistance (MR), the change of a material's electrical resistance in response to an applied magnetic field, is a technologically important property that has been the topic of intense study for more than a quarter century. Here we report the observation of an unusual "butterfly" shaped titanic angular magnetoresistance (AMR) in the non-magnetic, Dirac material, ZrSiS. The MR is large and positive, reaching nearly 1.8 x 10^5 percent at 9 T and 2 K at an angle of 45o between the applied current (along the a-axis) and the applied field (90o is H parallel to the c-axis). Approaching 90o, a "dip" is seen in the AMR which can be traced to an angle dependent deviation from the H^2 law. By analyzing the SdH oscillations at different angles, we find that ZrSiS has a combination of 2D and 3D Dirac pockets comprising its Fermi surface and that the anomalous transport behavior coincides with a topological phase transition whose robust signature is evident despite transport contributions from other parts of the Fermi surface. We also find that as a function of angle, the temperature dependent resistivity in high field displays a broad peak-like behavior, unlike any known Dirac/Weyl material. The combination of very high mobility carriers and multiple Fermi surfaces in ZrSiS allow for large bulk property changes to occur as a function of angle between applied fields makes it a promising platform to study the physics stemming from the coexistence of 2D and 3D Dirac electrons.

The optical properties of layered tungsten ditelluride have been measured over a wide temperature and frequency range for light polarized in the $a$-$b$ planes. A striking low-frequency plasma edge develops in the reflectance at low temperature where this material is a perfectly compensated semimetal. The optical conductivity is described using a two-Drude model which treats the electron and hole pockets as separate electronic subsystems. At low temperature, one scattering rate collapses by over two orders of magnitude, while the other also undergoes a significant, but less dramatic, decrease; both scattering rates appear to display the quadratic temperature dependence expected for a Fermi liquid. First principles electronic structure calculations reveal that the low-lying optical excitations are due to direct transitions between the bands associated with the electron and hole pockets., Comment: 5 pages, 4 figures and 1 table; 5 pages of Supplementary Material

We investigate the orthorhombic phase (Td) of layered transition-metal-dichalcogenide MoTe$_2$ as a Weyl semimetal candidate, which was discovered to be a superconductor in our recent experiment. MoTe$_2$ exhibits four pairs of Weyl points lying slightly ($\sim$ 6 meV) above the Fermi energy in the bulk band structure. Unlike its cousin WTe$_2$, which was predicted to be a type-II Weyl semimetal recently, the spacing between each pair of Weyl points is found to be as large as 4 percent of the reciprocal lattice in MoTe$_2$ (six times larger than that of WTe$_2$). When projected to the surface, Weyl points are connected by Fermi arcs, which can be easily verified by ARPES due to the large Weyl point separation. In addition, we show that the correlation effect or strain can drive MoTe$_2$ from the type-II to type-I Weyl semimetal., Comment: 8 pages, 5 figures, accepted for publication

The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe$_2$ was identified.

Tris-sarcosine calcium chloride (TSCC) is a highly uniaxial ferroelectric with a Curie temperature of approximately 130K. By suppressing ferroelectricity with bromine substitution on the chlorine sites, pure single crystals were tuned through a ferroelectric quantum phase transition. The resulting quantum critical regime was investigated in detail - the first time for a uniaxial ferroelectric and for an organic ferroelectric - and was found to persist up to temperatures of at least 30K to 40K. The nature of long-range dipole interactions in uniaxial materials, which lead to non-analytical terms in the free-energy expansion in the polarization, predict a dielectric susceptibility varying as $1/T^3$ close to the quantum critical point. Rather than this, we find that the dielectric susceptibility varies as $1/T^2$ as expected and observed in better known multi-axial systems. We explain this result by identifying the ultra-weak nature of the dipoles in the TSCC family of crystals. Interestingly we observe a shallow minimum in the inverse dielectric function at low temperatures close to the quantum critical point in paraelectric samples that may be attributed to the coupling of quantum polarization and strain fields. Finally we present results of the heat capacity and electro-caloric effect and explain how the time dependence of the polarization in ferroelectrics and paraelectrics should be considered when making quantitative estimates of temperature changes induced by applied electric fields., Comment: 6 pages, 4 figures

The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices., Comment: 18 pages, 7 figures

This is a revised version of a manuscript that was originally posted here in February of 2014. It has been accepted at the journal Inorganic Chemistry after reviews that included those of two crystallographers who made sure all the t's were crossed and the i's were dotted. The old work (from 1968) that said that Cd3As2 was noncentrosymmetric was mistaken, with the authors of that study making a type of error that in the 1980s became infamous in crystallography. As a result of the increased scrutiny of the issue of centrosymmetricity of the 1980's, there are now much better analysis tools to resolve the issue fully, and its important to understand that not just our crystals are centrosymmetric, even the old guy's crystals were centrosymmetric (and by implication everyone's are). There is no shame in having made that error back in the day and those authors would not find the current centrosymmetric result controversial; their paper is excellent in all other aspects. This manuscript describes how the structure is determined, explains the structure schematically, calculates the electronic structure based on the correct centrosymmetric crystal structure, and gives the structural details that should be used for future analysis and modeling., Accepted by ACS Inorganic Chemistry