1. In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
- Author
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Maximilian Liehr, Q. Ye, H. F. Li, Martin Rodgers, H. Chong, M. Smalley, S. Deora, Dmitry Veksler, Stephen Bennett, C. Johnson, S. Gausepohl, M. Passaro, T. Burroughs, Brian L. Ji, Joseph Piccirillo, Saikumar Vivekanand, Harlan Stamper, and V. Kaushik
- Subjects
FOS: Computer and information sciences ,Condensed Matter - Materials Science ,Product design ,Computer science ,Computer Science - Emerging Technologies ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,Line (electrical engineering) ,Manufacturing variability ,Resistive random-access memory ,Emerging Technologies (cs.ET) ,Product (mathematics) ,Physics - Data Analysis, Statistics and Probability ,Electronic engineering ,Bit error rate ,Error detection and correction ,Random access ,Data Analysis, Statistics and Probability (physics.data-an) - Abstract
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories., Comment: 4 pages. Memory Workshop (IMW), 2015 IEEE International
- Published
- 2015
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