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We report an enhancement of the anomalous Nernst effect (ANE) in Ni/Pt (001) epitaxial superlattices. The transport and magneto-thermoelectric properties were investigated for the Ni/Pt superlattices with various Ni layer thicknesses (${\it t}$). The anomalous Nernst coefficient was increased up to more than 1 ${\mu}$V K$^{-1}$ for 2.0 nm ${\leq}$ ${\it t}$ ${\leq}$ 4.0 nm, which was the remarkable enhancement compared to the bulk Ni. It has been found that the large transverse Peltier coefficient (${\alpha}$$_{xy}$), reaching ${\alpha}$$_{xy}$ = 4.8 A K$^{-1}$ m$^{-1}$ for ${\it t}$ = 4.0 nm, plays a prime role for the enhanced ANE of the Ni/Pt (001) superlattices., Comment: 22 pages, 4 figures

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is $380\phantom{\rule{0.16em}{0ex}}{\mathrm{emu}/\mathrm{cm}}^{3}$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

In this study, the microscopic origins of the voltage-controlled magnetic anisotropy (VCMA) in $3d$-ferromagnetic metals are revealed. Using in situ x-ray fluorescence spectroscopy that provides a high quantum efficiency, electric-field-induced changes in orbital magnetic moment and magnetic dipole ${T}_{\mathrm{z}}$ terms in ultrathin Co films are demonstrated. An orbital magnetic moment difference of $0.013\phantom{\rule{0.16em}{0ex}}{\ensuremath{\mu}}_{\mathrm{B}}$ was generated in the presence of electric fields of $\ifmmode\pm\else\textpm\fi{}0.2\phantom{\rule{0.16em}{0ex}}\mathrm{V}/\mathrm{nm}$. The VCMA of Co was properly estimated by the induced change in orbital magnetic moment, according to the perturbation theory model. The induced change in the magnetic dipole ${T}_{\mathrm{z}}$ term only slightly contributed to the VCMA in $3d$-ferromagnetic metals.