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Electronic Fabry-P{é}rot interferometry is a powerful method to probe quasiparticle charge and anyonic braiding statistics in the fractional quantum Hall regime. We extend this technique to the hierarchy $ν= 2/5$ fractional quantum Hall state, possessing two edge modes that in our device can be interfered independently. The outer edge mode exhibits interference similar to the behavior observed at the $ν= 1/3$ state, indicating that the outer edge mode at $ν= 2/5$ has properties similar to the single mode at $ν= 1/3$. The inner mode shows an oscillation pattern with a series of discrete phase jumps indicative of distinct anyonic braiding statistics. After taking into account the impact of bulk-edge coupling, we extract an interfering quasiparticle charge ${e^*} = 0.17 \pm 0.02$ and anyonic braiding phase $θ_a = (-0.43 \pm 0.05)\times 2π$, which serve as experimental verification of the theoretically predicted values of $e^* = \frac{1}{5}$ and $θ_a = -\frac{4π}{5}$., 10+12 pages, 6+12 figures

A Josephson junction (JJ) is a key device in the development of superconducting circuits, wherein a supercurrent in the JJ is controlled by the phase difference between the two superconducting electrodes. Recently, it has been shown that the JJ current is nonlocally controlled by the phase difference of another nearby JJ via coherent coupling. Here, we use the nonlocal control to engineer the anomalous Josephson effect. We observe that a supercurrent is produced by the nonlocal phase control even without any local phase difference, using a quantum interference device. The nonlocal phase control simultaneously generates an offset of a local phase difference giving the JJ ground state. These results provide novel concepts for engineering superconducting devices such as phase batteries and dissipationless rectifiers., Comment: 15 pages and 4 figures for the main manuscript, 8 pages and 6 figures for the supplementary information

A single electron shared between two levels threaded by a magnetic flux is an irreducibly simple quantum system in which interference is predicted to occur. We demonstrate tuning of the tunnel coupling between two such electronic levels with flux, implemented in a loop comprising two quantum dots. Using radio-frequency reflectometry of the dots' gate electrodes we extract the inter-dot coupling, which exhibits oscillations with a periodicity of one flux quantum. In different tunneling regimes we benchmark the oscillations' contrast, and find that their amplitude varies with the levels involved, while tunneling is generically not suppressed at oscillation minima. These results establish the feasibility and limitations of parity readout of qubits with tunnel couplings tuned by flux., Comment: 15 pages, 10 figures. Version as submitted to a scientific journal with updated author list, corrected figure S5, and minor changes to data analysis

The Josephson junction (JJ) is an essential element of superconducting (SC) devices for both fundamental and applied physics. The short-range coherent coupling of two adjacent JJs forms the Andreev molecule states (AMSs), which will provide a new ingredient to engineer the SC transport in JJs and control the Andreev qubits. However, no experimental evidence of the AMSs in the coupled JJs has been reported. Here we provide the tunnel spectroscopic results of electrically controllable two planar JJs sharing one SC electrode. We discover that the coupled JJ results are highly modulated from the single JJ results, due to formation of the phase-dependent AMSs, meaning that the two JJs are coherently coupled. In addition, the superconducting gap closing due to the AMS formation is observed. Our results would help in understanding the microscopic mechanism of the coherent coupling and promoting the AMS physics to apply for research of the topological superconductivity and quantum information technology.

The Josephson diode (JD) is a non-reciprocal circuit element that supports a larger critical current in one direction compared to the other. This effect has gained a growing interest because of promising applications in superconducting electronic circuits with low power consumption. Some implementations of a JD rely on breaking the inversion symmetry in the material used to realize Josephson junctions (JJs), but two recent theoretical proposals have suggested that the effect can also be engineered by combining two JJs hosting highly transmitting Andreev bound states in a Superconducting Quantum Interference Device (SQUID) at a small, but finite flux bias [1, 2]. We have realized a SQUID with two JJs fabricated in a proximitized InAs two-dimensional electron gas (2DEG). We demonstrate gate control of the diode efficiency from zero up to around 30% at specific flux bias values which comes close to the maximum of approxiomately 40% predicated in Ref. [1]. The key ingredients to the JD effect in the SQUID arrangement is the presence of highly transmitting channels in the JJs, a flux bias and an asymmetry between the two SQUID arms., Comment: 9+8 pages, 3+6 figures (main text + supplementary)

Superconducting devices with broken time-reversal and spatial-inversion symmetries can exhibit novel superconducting phenomena. The observation of superconducting diode effects, which is applicable for dissipationless rectification, provides information on the breaking of such symmetries. We experimentally study a Josephson junction (JJ) coupled to another adjacent JJ as a new system exhibiting the superconducting diode effect. We demonstrate that the observed superconducting diode effect can be controlled non-locally based on the phase difference with the adjacent JJ. These results indicate that the time-reversal and spatial-inversion symmetries of a JJ are broken by the coherent coupling to an adjacent JJ, and this enables the engineering of novel superconducting phenomena mediated by coherent coupling among JJs and development of their applications for superconducting diode devices.

The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, large effective $g$-factor, and control over proximity-induced superconductivity are important attributes. Disorder in shallow semiconductor structures plays a crucial role for the stability of putative topological phases in hybrid structures. We report on the transport properties of 2DEGs residing 10nm below the surface in shallow InAs quantum wells in which mobility may exceed 100,000 cm$^2$/Vs at 2DEG density n$_{2DEG}$$\leq$1$\times$10$^{12}$cm$^{-2}$ at low temperature., Comment: 11 pages, 10 figures

Cooper pairs occupy the ground state of typical s-wave superconductors and are composed of maximally entangled electrons with opposite spin. In order to study the spin and entanglement properties of these electrons, one must separate them spatially via a process known as Cooper pair splitting (CPS). Here we provide the first demonstration of CPS in a semiconductor two-dimensional electron gas (2DEG). By coupling two quantum dots to a superconductor-semiconductor hybrid region we achieve efficient Cooper pair splitting, and clearly distinguish it from other local and non-local processes. In the presence of a magnetic field, the dots are operated as spin-filters to obtain information about the spin of the electrons forming the Cooper pair. Not only do we demonstrate the splitting of Cooper pairs into opposite-spin electrons (i.e. singlet pairing), but also into equal-spin electrons, thus achieving a triplet pairing between the quantum dots. Notably, the exceptionally strong spin-orbit interaction in our 2DEGs, results in comparable amplitudes of singlet and triplet pairing. The demonstration of singlet and triplet CPS in 2DEGs opens the possibility to study on-chip entanglement and topological superconductivity in the form of artificial Kitaev chains.

Transport is called nonreciprocal when not only the sign, but also the absolute value of the current, depends on the polarity of the applied voltage. It requires simultaneously broken inversion and time-reversal symmetries, e.g., by the interplay of spin-orbit coupling and magnetic field. So far, observation of nonreciprocity was always tied to resistivity, and dissipationless nonreciprocal circuit elements were elusive. Here, we engineer fully superconducting nonreciprocal devices based on highly-transparent Josephson junctions fabricated on InAs quantum wells. We demonstrate supercurrent rectification far below the transition temperature. By measuring Josephson inductance, we can link nonreciprocal supercurrent to the asymmetry of the current-phase relation, and directly derive the supercurrent magnetochiral anisotropy coefficient for the first time. A semi-quantitative model well explains the main features of our experimental data. Nonreciprocal Josephson junctions have the potential to become for superconducting circuits what $pn$-junctions are for traditional electronics, opening the way to novel nondissipative circuit elements., Comment: 16 pages, 11 figures

Utilizing an electronic Fabry-Perot interferometer in which Coulomb charging effects are suppressed, we report experimental observation of anyonic braiding statistics for the $��=1/3$ fractional quantum Hall state. Strong Aharonov-Bohm interference of the $��=1/3$ edge mode is punctuated by discrete phase slips consistent with an anyonic phase of $��_{anyon}=\frac{2��}{3}$. Our results are consistent with a recent theory of a Fabry-Perot interferometer operated in a regime in which device charging energy is small compared to the energy of formation of charged quasiparticles. Close correspondence between device operation and theoretical predictions substantiates our claim of observation of anyonic braiding., 9 pages, 4 figures

Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effects, superconducting correlations in quantum (spin) Hall systems, hybrid superconducting qubits and emergent topological states in semiconductors with spin-orbit interaction (SOI). InSb is a well-known example of such a strong SOI semiconductor, however hybrid superconducting devices in InSb quantum wells remain unexplored. Here, we interface InSb 2DEGs with a superconductor (NbTiN) to create Josephson junctions (JJs), thus providing the first evidence of induced superconductivity in high quality InSb quantum wells. The JJs support supercurrent transport over several microns and display clear signatures of ballistic superconductivity. Furthermore, we exploit the large Land�� g-factor and gate tunability of the junctions to control the current-phase relation, and drive transitions between the $0$ and $��$-states. This control over the free energy landscape allows us to construct a phase diagram identifying these $0$ and $��$-regions, in agreement with theory. Our results establish InSb quantum wells as a promising new material platform to study the interplay between superconductivity, SOI and magnetism., Includes supplementary information. Data files available at: https://doi.org/10.4121/uuid:5fab8273-8794-4cd7-96d4-ba8ec00a62cf

The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates from the in-built potentials which lead to broadened and shifted band spectra in spectroscopy measurements. In this work we present a method to resolve the band alignment of buried semiconductor-metal interfaces using core level photoemission spectroscopy and self-consistent electronic structure simulations. As a proof of principle we apply the method to a clean in-situ grown InAs(100)/Al interface, a system with a strong in-built band bending. Due to the high signal-to-noise ratio of the core level spectra the proposed methodology can be used on previously inaccessible semiconductor-metal interfaces and support targeted design of novel hybrid devices and form the foundation for a interface parameter database for specified synthesis processes of semiconductor-metal systems., Comment: 12 pages, 5 figures

Topological materials bear gapped excitations in bulk yet protected gapless excitations at boundaries. Magnetoplasmons (MPs), as high-frequency density excitations of two-dimensional electron gas (2DEG) in a perpendicular magnetic field, embody a prototype of band topology for bosons. The time-reversal-breaking magnetic field opens a topological gap for bulk MPs up to the cyclotron frequency; topologically-protected edge magnetoplasmons (EMPs) bridge the bulk gap and propagate unidirectionally along system's boundaries. However, all the EMPs known to date adhere to physical edges where the electron density terminates abruptly. This restriction has made device application extremely difficult. Here we demonstrate a new class of topological edge plasmons -- domain-boundary magnetoplasmons (DBMPs), within a uniform edgeless 2DEG. Such DBMPs arise at the domain boundaries of an engineered sign-changing magnetic field and are protected by the difference of gap Chern numbers (+/-1) across the magnetic domains. They propagate unidirectionally along the domain boundaries and are immune to domain defects. Moreover, they exhibit wide tunability in the microwave frequency range under an applied magnetic field or gate voltage. Our study opens a new direction to realize high-speed reconfigurable topological devices., Comment: 7 pages, 6 figures

We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B \textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $��_q$ unless density inhomogeneity is explicitly considered; 2) $��_q$ does not correlate well with quality as measured by $��_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling., 12 pages, 4 figures

We report a high temperature (T = 0.3K) indicator of the excitation gap $��_{5/2}$ at the filling factor $ ��=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of correlation between mobility $��$ and $��_{5/2}$ has been well established in previous experiments, we define, analyze and discuss the utility of a different metric $��_{5/2}$, the resistivity at $��=5/2$, as a high temperature predictor of $��_{5/2}$. This high-field resistivity reflects the scattering rate of composite fermions. Good correlation between $��_{5/2}$ and $��_{5/2}$ is observed in both a density tunable device and in a series of identically structured wafers with similar density but vastly different mobility. This correlation can be explained by the fact that both $��_{5/2}$ and $��_{5/2}$ are sensitive to long-range disorder from remote impurities, while $��$ is sensitive primarily to disorder localized near the quantum well., 11 pages, 4 figures

We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility in excess of 35x10^6cm2/Vs at density n=3.0x10^11/cm2 and mobility 18x10^6cm2/Vs at n=1.1x1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting mobility, This is an author-created, un-copyedited version of an article accepted for publication in the Journal of Crystal Growth. The Version of Record is available online at http://www.sciencedirect.com/science/article/pii/S0022024816300367 13 pages, 6 figures

Understanding the non-monotonic behavior in the temperature dependent resistance, R(T), of strongly correlated two-dimensional (2D) carriers in clean semiconductors has been a central issue in the studies of 2D metallic states and metal-insulator-transitions. We have studied the transport of high mobility 2D holes in 20nm wide GaAs quantum wells (QWs) with varying short-range disorder strength by changing the Al fraction x in the Al_xGa_{1-x}As barrier. Via varying the short range interface roughness and alloy scattering, it is observed that increasing x suppresses both the strength and characteristic temperature scale of the 2D metallicity, pointing to the distinct role of short-range versus long-range disorder in the 2D metallic transport in this correlated 2D hole system with interaction parameter r_s~ 20., Comment: accepted for publication in Phys Rev B

We discover a new topological excitation of two dimensional electrons in the quantum Hall regime. The strain dependence of resistivity is shown to change sign upon crossing filling-factor-specified boundaries of reentrant integer quantum Hall effect (RIQHE) states. This observation violates the known symmetry of electron bubbles thought to be responsible for the RIQHE. We demonstrate theoretically that electron bubbles become elongated in the vicinity of charge defects and form textures of finite size. Calculations confirm that texturing lowers the energy of excitations. These textures form hedgehogs (vortices) around defects having (lacking) one extra electron, resulting in striking strain-dependent resistivity that changes sign on opposite boundaries of the RIQHE. At low density these textures form an insulating Abrikosov lattice. At densities sufficient to cause the textures to overlap, their interactions are described by the XY-model and the lattice melts. This melting explains the sharp metal-insulator transition observed in finite temperature conductivity measurements., Comment: 7 pages, 4 figures and supplementary information

We present the first magneto-absorption studies of coupled electron double layers in the quantum Hall regime. Optical absorption spectra in the vicinity of total filling factor nu = 1 reveal intriguing behavior that have no analog in the single electron layer nu = 1 state and demonstrate the interplay between single-particle tunneling and inter-layer Coulomb effects. The spectra provide direct evidence of a ground-state that evolves from a region dominated by single-particle tunneling to a regime in which inter-layer Coulomb interactions determine the nature of the ground-state. Moreover the spectra provide the first direct evidence that the incompressible ground-state at nu = 1 in the many-body regime is not fully pseudospin polarized and is sensitive to the effects of quantum fluctuations in the pseudospin variable., Comment: 5 pages, 5 figures